Intel Corporation

Cemil S Geyik

Kemal Aygun

Srinivas V Pietambaram

Rahul N Manepalli

Zhiguo Qian

Robert L Sankman

Zhichao Zhang

Sanka Ganesan

Gang Duan

Sri Chaitra Jyotsna Chavali

Jiwei Sun

Kemal Aygün

Arghya Sain

Lijiang Wang

Guneet Kaur

Embodiments include package substrates and a semiconductor package with such package substrates. A package substrate includes a first conductive layer in a first magnetic layer, and a second magnetic layer over the first magnetic layer, where the first and second magnetic layers include magnetic materials. The package substrate also includes a second conductive layer in the second magnetic layer. The second conductive layer includes a plurality of first traces fully surrounded by the first and second magnetic layers. The package substrate includes a third conductive layer over the second magnetic layer. The magnetic materials may include manganese Mn ferrite materials, Zn/Mn ferrite materials, or Ni/Zn ferrite materials. The magnetic materials include material properties with a low constant value, a magnetic tangent value, a frequency, a base filler chemistry, a filler shape, a filler orientation, a filler percentage, a loading fraction value, a permeability, an insertion loss, and a resin formulation.

Interconnect loss of high density package with magnetic material

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, wherein the package substrate comprises a first routing architecture. In an embodiment, the electronic package further comprises a first die on the package substrate, a second die on the package substrate, wherein the first die is electrically coupled to the second die by a bridge embedded in the package substrate, and a routing patch on the package substrate. In an embodiment, the routing patch is electrically coupled to the second die, and wherein the routing patch comprises a second routing architecture that is different than the first routing architecture.

Scalable high speed high bandwidth IO signaling package architecture and method of making

Structures are described that include multi-layered adhesion promotion films over a conductive structure in a microelectronic package. The multi-layered aspect provides adhesion to surrounding dielectric material without a roughened surface of the conductive structure. Furthermore, the multi-layered aspect allows for materials with different dielectric constants to be used, the average of which can provide a closer match to the dielectric constant of the surrounding dielectric material. According to an embodiment, a first dielectric layer that includes at least one nitride material can provide good adhesion with the underlying conductive structure, while one or more subsequent dielectric layers that include at least one oxide material can provide different dielectric constant values (e.g., typically lower) compared to the first dielectric layer to bring the overall dielectric constant closer to that of a surrounding dielectric material. The first and second layers may be discrete layers or a single continuous layer with grading.

Multi-layered adhesion promotion films

Density-graded adhesion layers on conductive structures within a microelectronic package substrate are described. An example is a density-graded adhesion layer that includes a dense region proximate to a conductive structure that is surrounded by a less dense (or porous) region adjacent to an overlying dielectric layer. Providing such a graded adhesion layer can have a number of benefits, which can include providing both mechanical connections for improved adhesion with a surrounding dielectric layer and provide hermetic protection for the underlying conductive structure from corrosive species. The adhesion layer enables the conductive structure to maintain its as-formed smooth surface which in turn reduces insertion loss of signals transmitted through the conductive structure.

Density-graded adhesion layer for conductors

Disclosed embodiments include a signal trace in an integrated-circuit device package substrate. Portions of the signal traces, suspend a landing pad in a recess, and a portion of the suspended signal trace is form-factor modulated that is different in cross-section area than other portions of the suspended signal trace.

Trace modulations in connectors for integrated-circuit packages

Methods/structures of forming package structures are described. Those methods/structures may include a conductive pin comprising: a cantilever beam portion physically coupled with a first side of a package substrate; a contact pin portion, wherein a terminal end of the contact pin portion is physically and electrically coupled to a board; a housing structure comprising a housing cavity, wherein the contact pin portion is disposed at least partially within the housing cavity; and a conductive material disposed on housing sides and/or adjacent a surface of the housing cavity. The placement of the conductive material is optimized to meet the requirements for either double data rate (DDR) and/or peripheral component interface express (PCIe) interfaces.

Growing community of inventors

Gilbert, AZ, United States of America

Cemil S Geyik