Stmicroelectronics S.r.l.

Carmelo Romeo

Simone Alba

Lorena Beghin

Francesco Cazzaniga

Francesca Canali

Luca Riva

A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.

Nonlithographic method of defining geometries for plasma and/or ion implantation treatments on a semiconductor wafer

A process for etching a dielectric layer, including the steps of forming, over the dielectric layer, a layer of polysilicon, forming over the layer of polysilicon a photoresist mask layer, etching the layer of polysilicon using the photoresist mask layer as an etching mask for selectively removing the layer of polysilicon, removing the photoresist mask layer from over the layer of polysilicon, etching the dielectric layer using the layer of polysilicon as a mask. Subsequently, the layer of polysilicon is converted into a layer of a transition metal silicide, and the layer of transition metal silicide is etched for selectively removing the latter from over the dielectric layer.

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Sulbiate, Italy

Carmelo Romeo