International Business Machines Corporation

Globalfoundries Inc.

Other

Carlos Strocchia-Rivera

George W Banke, Jr

James M Robert

A method of proving inline characterization of electrical properties of a fin-shaped field effect transistor (finFET) is provided. Embodiments include applying an electrical current along a length of at least one fin of a finFET disposed over a wafer surface; generating a magnetic field across a width of the at least one fin, wherein the magnetic field is perpendicular in direction to the electrical current; and detecting electron flow concentrated at an upper portion of the at least one fin.

FinFET electrical characterization with enhanced hall effect and probe

Methods for determining a target thickness of a conformal film with reduced uncertainty, and an integrated circuit (IC) chip having a conformal film of the target thickness are provided. In an embodiment, a first critical dimension of a structure disposed on a wafer is measured. Said structure has at least one vertical surface. A first conformal film is deposited over the structure covering each of a horizontal and the vertical surface of the structure. A second critical dimension of the covered structure is then measured. The target thickness of the conformal film is determined based on difference between the first CD measured on the structure and the second CD measured on the covered structure.

Film thickness metrology

A contamination detection apparatus may include an optical element having an outer surface and an other surface opposing the outer surface, a first capacitor plate located on the outer surface at an outer periphery of the optical element, and a second capacitor plate located on the outer surface at the outer periphery of the optical element. The second capacitor plate is located adjacent the first capacitor plate and separated from the first capacitor by a gap to form a capacitor, whereby a contaminant is electrically detected based on the contaminant entering the gap and varying a capacitance value corresponding to the capacitor.

Lens coating/contamination electronic detection

An integrated illumination reference source for generating an illumination reference signal may include an optical element having a first outer surface and a second outer surface, such that the first and the second outer surface are substantially opposing. The optical element receives an incident optical signal at the first outer surface and projects the incident optical signal from the second outer surface onto a surface. A reflective device that is located on a region of the second outer surface is offset from an optical axis of the optical element. The reflective device includes a reflective surface that reflects a portion of the incident optical signal from the second outer surface back through the first outer surface, whereby the reflective surface of the reflective device is encapsulated between the first outer surface and the second outer surface of the optical element.

Integrated optical illumination reference source

Determination of non-linearity of a positioning scanner of a measurement tool is disclosed. In one embodiment, a method may include providing a probe of a measurement tool coupled to a positioning scanner; scanning a surface of a first sample with the surface at a first angle relative to the probe to attain a first profile; scanning the surface of the first sample with the surface at a second angle relative to the probe that is different than the first angle to attain a second profile; repeating the scannings to attain a plurality of first profiles and a plurality of second profiles; and determining a non-linearity of the positioning scanner using the different scanning angles to cancel out measurements corresponding to imperfections due to the surface of the sample. The non-linearity may be used to calibrate the positioning scanner.

Non-linearity determination of positioning scanner of measurement tool

A method for implementing ellipsometry for an ultrathin film includes directing a polarized light beam incident upon a sample surface, receiving an initial reflected beam from the sample surface and redirecting the initial reflected beam back upon said sample surface one or more times so as to produce a final reflected beam. The final reflected beam is received through an analyzer and at a detector so as to determine characteristics of the ultrathin film.

Method and apparatus for improved ellipsometric measurement of ultrathin films

A process control method to monitor ion implantation process conditions by measuring the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The patterned masking material, however, may also undergo a chemical or physical change during processing. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration of ions implanted into the semiconductor substrate.

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Highland, NY, United States of America

Carlos Strocchia-Rivera