Lam Research Corporation

Carl Woods

John Martin De Larios

James Paul Garcia

Fred Conrad Redeker

John Boyd

Yezdi N Dordi

Mike Ravkin

John P Parks

Jeffrey J Farber

Michael Ravkin

Robert A Maraschin

Michael G R Smith

Fritz C Redeker

Ji Zhu

Aleksander Owczarz

John M deLarios

Bob Maraschin

Jacob Wylie

Mikhail Korolik

Arthur M Howald

Alan M Schoepp

Hyungsuk Alexander Yoon

David J Hemker

William Thie

Tiruchirapalli Arunagiri

Benjamin W Mooring

Robert Knop

Michael L Orbock

Afshin Nickhou

Glenn W Davis

John M Boyd

A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.

Controlled ambient system for interface engineering

A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator and a gate. The force applicator has an applicator length and is operatively coupled to the cleaning station. The force applicator is rotatable and is adjusted to a first height off the surface of the carrier as the substrate is being cleaned. The force applicator has a hollow structure with internal channels and openings dispersed throughout the applicator length to dispense cleaning solution to substrate surface. The gate is affixed to a trailing edge of the force applicator and is set to a second height off the surface of the carrier. The gate includes a gate length that at least spans the applicator length.

Method and system for uniformly applying a multi-phase cleaning solution to a substrate

An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.

A method for preparing a surface of a substrate is provided. The method includes scanning the surface of the substrate by a meniscus, preparing the surface of the substrate using the meniscus, and performing a next preparation operation on the surface of the substrate that was prepared without performing a rinsing operation.

Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same

Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.

Proximity processing using controlled batch volume with an integrated proximity head

First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

Method and apparatus for plating semiconductor wafers

Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate

An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

Apparatus for plating semiconductor wafers

A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer ('wafer'). The multi-layered wafer support apparatus includes a bottom film layer and a top film layer. The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electrical circuits that are each defined to electrically contact a peripheral top surface of the wafer at diametrically opposed locations about the wafer.

Wafer support apparatus for electroplating process and method for using the same

A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided.

An apparatus for processing a substrate is provided. The apparatus includes a plating head configured to plate a surface of the substrate with a layer of a material using a fluid meniscus between the plating head and a surface of the substrate. The apparatus also includes a fluid meniscus stabilizing apparatus configured to apply a pre-processing fluid to the surface of the substrate before the fluid meniscus is applied to the surface.

Reducing mechanical resonance and improved distribution of fluids in small volume processing of semiconductor materials

A substrate holding and transporting assembly is disclosed. The substrate holding and transporting assembly includes a base plate and a pair of clamps connected to the base plate in a spaced apart orientation, the spaced apart orientation of the pair of clamps enable support of a substrate with at least two independent points. The substrate holding and transporting assembly also includes an electrode assembly connected to the base plate at a location that is substantially between the pair of clamps. The electrode assembly defined to impart an electrical contact to the substrate when present and held by the pair of clamps.

Substrate gripper with integrated electrical contacts

Methods for processing a substrate with a fluid meniscus are provided. One method includes positioning a transition surface substantially coplanar to a substrate surface. The transition surface is defined to be adjacent to an edge of the substrate. And, moving a fluid meniscus between the transition surface and the substrate surface.

Methods for transitioning a fluid meniscus to and from surfaces of a substrate

Method for processing a substrate are provided. The processing occurs when the substrate is moved between cluster tools. One method includes providing the substrate to a cluster tool, and the cluster tool is configured to move the substrate into a meniscus processing module having at least one proximity head. The proximity head is configured to perform operations including applying a fluid onto a region of a surface of the substrate, such the fluid is continuously flown so as to substantially fill the region between a surface of the proximity head and the surface of the substrate. An operation of removing the fluid from the region by applying a vacuum force through the proximity head is also provided. The applying and removing is operated substantially simultaneously so that the fluid forms a controlled fluid meniscus that remains between the surface of the substrate and the surface of the proximity head when the proximity head is positioned over the substrate. The method can include moving one of the controlled fluid meniscus or the substrate so that the controlled fluid meniscus is caused to contact regions of the surface of the substrate to cause fluid processing of the surface of the substrate when in the meniscus processing module. The method can also include moving the substrate out of the meniscus processing module and into a next module of the of the cluster tool or out of the cluster tool.

Growing community of inventors

Aptos, CA, United States of America

Carl Woods