Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC-Acer Semiconductor Manufacturing Corporation

Calvin Wu

Shiou-han Liaw

Yau-feng Lo

Jiaren Chen

Po-lung Chuang

Maxwell Lai

Yen-hung Lai

Paul Chuang

Jia-ren Chen

The invention is a mask pattern comprising a first region that is strip-shaped and has two long sides and two short sides, and two second regions that are strip-shaped with each region having two long sides and two short sides, in which the short sides of the second regions are shorter than the sides of the first region, and the second regions extend in a lengthwise direction from the two short sides of the first region, respectively, with the short sides of the second regions adjacent to the short sides of the first region. The mask pattern is used to define a floating gate region in a flash memory.

Mask pattern for defining a floating gate region

A method for fabricating poly-spacers used in a semiconductor substrate, comprising: forming an undoped first polysilicon layer on the semiconductor substrate; performing a first ion implantation with a first angle to implant impurities into the first polysilicon layer; performing a second ion implantation with a second angle to implant the impurities into the first polysilicon layer; forming a second polysilicon layer on the first polysilicon layer; and etching the first polysilicon layer and the second polysilicon layer to form spacers.

Method for fabricating poly-spacers

Growing community of inventors

Hsinchu, Taiwan

Calvin Wu