Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

C C Chang

Yi-An Lin

Alan Kuo

Yu-Lung Shih

Chao-Keng Li

J S Liu

M C Cheng

A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.

Semiconductor device having a passivation layer

Semiconductor device having a passivation layer and method of making

An integrated circuit (IC) device includes a redistribution line over a substrate, wherein an entire sidewall of the redistribution line is curved. The IC device further includes a passivation layer over the redistribution line, wherein a distance from a bottommost surface of the passivation layer to the substrate is less than a distance from a bottommost surface of the redistribution line to the substrate. The IC device further includes a polymer layer over the passivation layer.

Post passivation interconnect

An integrated circuit (IC) device includes a first passivation layer over a substrate. The IC device further includes a redistribution line over the first passivation layer, wherein the redistribution line has a barrel-shaped profile. The IC device further includes a second passivation layer over the redistribution line. The IC device further includes a polymer layer over the second passivation layer.

A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device includes a dielectric layer over the conductive pad, wherein the dielectric layer comprises silicon oxide. The semiconductor device includes a first passivation layer directly over the dielectric layer, wherein the first passivation layer comprises silicon oxide. The semiconductor device includes a second passivation layer directly over the first passivation layer, wherein the second passivation layer comprises silicon nitride.

A method of manufacturing a semiconductor structure. The method includes depositing a conductive material over a substrate, and removing a portion of the conductive material to form a conductive structure having a barrel shape. A width of a body portion of the conductive structure is greater than a width of an upper portion and a width of a bottom portion of the conductive structure.

Post passivation interconnect and fabrication method therefor

A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad.

Semiconductor device having a passivation layer and method of making the same

The present invention discloses a method for etching a silicon surface or forming alignment marks in a silicon substrate by first coating the substrate with an oxide layer, then depositing and patterning a photoresist layer on top of the oxide layer and forming the alignment marks by a dry etching process utilizing fluorine/oxygen etchant chemistry for the simultaneous etching of the two layers in a single process wherein the oxide layer prevents the contamination of the silicon wafer by any silicon particles formed.

Method for etching silicon surface

A dress fastener for fastening any two parts of a dress together, which includes a male member comprising a decorative button and a hook portion, and a female member comprising a retaining plate having two unitary screws respectively screwed up with two safety nuts. The male and female members are respectively secured to a dress at two opposite or corresponding parts thereof so that such two parts can be firmly secured together when the hook portion is connected to the retaining plate.

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Hsinchu, Taiwan

C C Chang