Applied Materials, Inc.

Seagate Technology Incorporated

Byung Seok Kwon

Prashant Kumar Kulshreshtha

Vinay K Prabhakar

Kwangduk Douglas Lee

David James Ellison

Viren Kalsekar

Satya Teja Babu Thokachichu

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Jian Li

Karthik Janakiraman

Rui Cheng

Abdul Aziz Khaja

Zubin Huang

Diwakar N Kedlaya

Edward P Hammond

Umesh M Kelkar

Sarah Michelle Bobek

Venkata Sharat Chandra Parimi

Satish Radhakrishnan

Sungwon Ha

Ratsamee Limdulpaiboon

Anjana M Patel

Liangfa Hu

Bushra Afzal

In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

Plasma-enhanced chemical vapor deposition of carbon hard-mask

Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Heated pedestal design for improved heat transfer and temperature uniformity

The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Methods of reducing chamber residues

A slider is provided with a conformal coating (e.g., an oxide) on the air-bearing surface (ABS) to provide a consistent surface energy to the ABS. The conformal coating may be formed by an atomic layer deposition (ALD) process. A consistent surface energy inhibits accumulation of contaminants on the slider ABS, such as at topographical transition areas.

Coated slider to inhibit contamination accumulation

Growing community of inventors

San Jose, CA, United States of America

Byung Seok Kwon