Samsung Electronics Co., Ltd.

Byoung-Sup Ahn

Jin Hyeock Choi

Dong-gun Lee

Sang-Hee Lee

In-Sung Kim

In-kyun Shin

Young-Mi Lee

Sung-min Huh

Jae-pil Shin

Su-Young Lee

Hee-young Kang

Rae-won Yi

Ji-soong Park

Chang-kwon Hwangbo

An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Exposure apparatus and method of manufacturing semiconductor device

Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.

Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom

A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Method of correcting flare and method of preparing extreme ultra violet mask

A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.

Reflective photomasks and methods of determining layer thicknesses of the same

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Seongnam-si, South Korea

Byoung-Sup Ahn