Jusung Engineering Co., Ltd.

Samsung Electronics Co., Ltd.

Moohan Co., Ltd.

Byoung Ha Cho

Jung Soo Kim

Won Hyung Lee

Cheol Ho Shin

Sang Tae Sim

Yong Il Kim

Chul Joo Hwang

Hong Soo Yoon

Jae Chan Kwak

Sung Kyu Kang

Ji Hyun Cho

Hong Min Yoon

Jae Sung Roh

Se Whan Jin

Hun Jung

Dae Sik Kim

Youn Joo Jang

The present inventive concept relates to a gas supply apparatus for a substrate processing apparatus, the gas supply apparatus comprising: a first supply line connected to a first gas spray unit; a plurality of first gas supply devices connected to the first supply line; a first measurement device measuring a first pressure at the first supply line; a second supply line connected to a second gas spray unit; a plurality of second gas supply devices connected to the second supply line; and a second measurement device measuring a second pressure at the second supply line, wherein the first measurement device checks if the first pressure deviates from a first reference value, and the second measurement device checks if the second pressure deviates from a second reference value.

Gas supply apparatus for substrate processing apparatus

Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Apparatus for treating substrate and method for treating substrate

Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.

Method for manufacturing semiconductor device

The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a SiClsource unlike a conventional atomic layer deposition process using a SiClsource. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing &#x2014;OH group.

Method for atomic layer deposition (ALD) of silicon oxide film

Growing community of inventors

Daejeon, South Korea

Byoung Ha Cho