Dnf Co., Ltd.

Samsung Electronics Co., Ltd.

Skhynix Inc.

Merck Patent Gmbh

Byeong Il Yang

Sang Ick Lee

Se Jin Jang

Sung Gi Kim

Joong Jin Park

Dong Kyun Lee

Myong Woon Kim

Jong Hyun Kim

Gyu-Hee Park

Eun Ae Jung

Jeong Joo Park

Sang Yong Jeon

A Ra Cho

Youn Joung Cho

Sam Dong Lee

Jang Hyeon Seok

Haeng Don Lim

Jun Hee Cho

Won Mook Chae

Changhyun Jin

Hee Yeon Jeong

Hyun Sik Noh

Eun Hyea Ko

Ji Yu Choi

Myoung Woon Kim

Gun Joo Park

Jae Chul Lee

Younghun Byun

Sang Do Lee

Jooyong Kim

Kyoung-Mun Kim

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Atomic layer etching method using ligand exchange reaction

An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C-Calkyl group, and N is nitrogen.

Atomic layer etching method and semiconductor device manufacturing method using the same

Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

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Daejeon, South Korea

Byeong Il Yang