Semes Co., Ltd.

Byeong Geun Kim

Pil Kyun Heo

Hyun Yoon

Ji Hoon Jeong

Jaeseong Lee

Young Dae Chung

Do Yeon Kim

Tae Shin Kim

Kuk Saeng Kim

Young Je Um

Jung Suk Goh

Jee Young Lee

Kwang Sup Kim

Won Geun Kim

Yong-Jun Seo

Ye Rim Yeon

Youngje Um

Doyeon Kim

Do Youn Lim

Yong Jun Seo

Yerim Yeon

Jungsuk Goh

Choonghyun Lee

Dongok Ahn

Jae Seong Lee

Yoon Ki Sa

Yoonki Sa

The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

Method and apparatus for treating substrate

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

Growing community of inventors

Incheon, South Korea

Byeong Geun Kim