Other

Canon Sales Co., Inc.

Bunya Matsui

Kazuo Maeda

Kouichi Ohira

Yuko Nishimoto

Noritada Satoh

The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. This apparatus includes a chamber having an introduction port for an impurity-containing ion gas which is connected to an impurity-containing gas supply section, a substrate holder supporting a substrate which is to be ion-injected, or doped, or on which a film is formed using the impurity-containing gas, an introduction port of a water-containing gas which is provided upstream of the substrate holder in accordance with a flow direction of the impurity-containing gas, and is connected to a water-containing gas supply section, and first plasma generating means in a space extending from the introduction port for water-containing gas to the substrate holder for converting water-containing gas to a plasma.

Impurity processing apparatus and method for cleaning impurity processing apparatus

The present invention relates to a plasma doping system capable of handling larger-diameter wafers and of introducing impurities to a shallow depth with a lower energy level. The plasma doping system includes a plasma generation chamber provided with a high-frequency power source and with antennas for generating a helicon plasma of a gas containing conduction type impurities. An impurity introduction chamber is provided with a substrate holding fixture. A plasma flow passage/shaping chamber provides a flow passage through which the helicon plasma flows from the plasma generation chamber to the impurity introduction chamber and has a magnetic field generator for generating a magnetic field to constrict the helicon plasma flowing therethrough.

Plasma doping system and plasma doping method

The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality. The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO.sub.2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO.sub.2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.

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Tokyo, Japan

Bunya Matsui