Lotus Applied Technology, LLC

Toppan Printing Co., Ltd.

Bryan Larson Danforth

Eric R Dickey

Masato Kon

A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 &#x212b;ngstroms or less is formed on the substrate.

Mixed metal-silicon-oxide barriers

A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.

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Portland, OR, United States of America

Bryan Larson Danforth