Advanced Micro Devices Corporation

Asml Netherlands B.v.

Other

Dupont Photomasks, Inc.

Bruno M La Fontaine

Harry Jay Levinson

Jongwook Kye

Alexander Igorevich Ershov

Silvia De Dea

Stefan Hunsche

Lin Lee Cheong

Vivek Kumar Jain

Gregory James Wilson

Brandon Wilson Verhoff

Tanbir Hasan

Wenjin Huang

Calvin T Gabriel

Kouros Ghandehari

Thomas Ingolf Wallow

Yunfei Deng

Ryoung-han Kim

Norbert Bowering

Marc Jurian Kea

Maxime Philippe Frederic Genin

Laurent Dieu

Jeffrey A Schefske

Yasri Yudhistira

Huina Xu

Hongmei Li

A method for determining a probabilistic model configured to predict a characteristic (e.g., defects, CD, etc.) of a pattern of a substrate subjected to a patterning process. The method includes obtaining a spatial map of a distribution of a residue corresponding to a characteristic of the pattern on the substrate, determining a zone of the spatial map based on a variation of the distribution of the residue within the spatial map, and determining the probabilistic model based on the zone and the distribution of the residue values or the values of the characteristic of the pattern on the substrate within the zone.

Prediction of out of specification based on a spatial characteristic of process variability

A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

Method and apparatus for pattern fidelity control

A method including obtaining verified values of a characteristic of a plurality of patterns on a substrate produced by a device manufacturing process; obtaining computed values of the characteristic using a non-probabilistic model; obtaining values of a residue of the non-probabilistic model based on the verified values and the computed values; and obtaining an attribute of a distribution of the residue based on the values of the residue. Also disclosed herein are methods of computing a probability of defects on a substrate produced by the device manufacturing process, and of obtaining an attribute of a distribution of the residue of a non-probabilistic model.

Defect prediction

A method including: determining a value of a characteristic of a patterning process or a product thereof, at a current value of a processing parameter; determining whether a termination criterion is met by the value of the characteristic; if the termination criterion is not met, determining a new value of the processing parameter from the current value of the processing parameter and a prior value of the processing parameter, and setting the current value to the new value and repeating the determining steps; and if the termination criterion is met, providing the current value of the processing parameter as an approximation of a value of the processing parameter at which the characteristic has a target value.

Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value

Optical element protection systems for protecting optical elements and particularly reflective optical elements from degradation of their optical properties in harsh environments such as the environment inside a vacuum chamber of an EUV light source. The systems include the uses of combinations of materials in various layers where the materials are chosen and the layers are configured and arranged to extend the lifetime of the optical element without compromising its optical properties.

Harsh environment optical element protection

Free radicals that combine with debris that is created by converting a target mixture to plasma that emits EUV light are received at a first opening defined by a first end of a conduit, the conduit including a material that passes the free radicals and the conduit including a sidewall that extends away from the first opening and defines at least one other opening, the at least one other positioned to release the free radicals toward an element that accumulates the debris on a surface. The free radicals in the conduit are directed toward the at least one other opening. The free radicals are passed through the at least one other opening and to the surface of the element to remove the debris from the surface of the element without removing the element from the EUV light source.

Transport system for an extreme ultraviolet light source

A system for an extreme ultraviolet (EUV) light source includes a radical transport system that includes one or more conduits, each of the one or more conduits comprising a sidewall, the sidewall comprising a linear portion and a second portion, the linear portion of the sidewall comprising a first end that defines a first opening, and the second portion of the sidewall comprising one or more openings from an interior of the conduit to an exterior of the conduit, where the second portion of at least one of the one or more conduits is positioned relative to a collector that is inside of a vacuum chamber of the EUV light source with a gap between the collector and the second portion; and a control system.

Ultrafine dimensions are accurately and efficiently formed in a target layer using a spacer lithographic technique comprising forming a first mask pattern, forming a cross-linkable layer over the first mask pattern, forming a cross-linked spacer between the first mask pattern and cross-linkable layer, removing the cross-linkable layer, cross-linked spacer from the upper surface of the first mask pattern and the first mask pattern to form a second mask pattern comprising remaining portions of the cross-linked spacer, and etching using the second mask pattern to form an ultrafine pattern in the underlying target layer. Embodiments include forming the first mask pattern from a photoresist material capable of generating an acid, depositing a cross-linkable material comprising a material capable of undergoing a cross-linking reaction in the presence of an acid, and removing portions of the non-cross-linked layer and cross-linked spacer from the upper surface of the first mask pattern before removing the remaining portions of the first mask pattern and remaining noncross-linked layer.

Spacer lithography

A reflective mask (e.g., an EUV reflective mask) and a method of making such a mask are disclosed. The mask includes an absorbent substrate and a reflective coating overlying the substrate. The reflective coating is patterned to include a circuit design that is to be transferred onto one or more wafers, and more particularly onto one or more die on the wafers, during semiconductor fabrication processing. The mask includes no other radiation absorbent material, and the occurrence and severity of dead zones, which commonly occur in conventional reflective masks and which degrade the fidelity of pattern transfers, are thereby mitigated. A methodology for inspecting the mask via the transmission of visible, UV or deep-UV radiation through the mask is also disclosed.

Reflective mask for short wavelength lithography

A methodology for forming a reflective mask is disclosed. The mask facilitates accurate pattern transfers as a substantially defect free reflective coating is formed therein. The mask can generally be formed according to four main steps, for example, which include depositing a reflective coating (e.g., formed of multiple layers) over a substrate, patterning and then inspecting for defects a masking material formed over the reflective coating, correcting such defects and finally patterning the reflective coating with the patterned masking material serving as a guide.

An optical tool includes a tool body that is transparent to light. Pluralities of parallel opaque lines on the body form a first outline in the shape of the square, and a second outline in the shape of a square which is centrally located relative to and within the first-mentioned square. Each pair of adjacent parallel lines has therebetween a first region that allows transmission of light therethrough without changing phase thereof, and a second region alongside the first region that allows transmission of light therethrough while shifting the phase thereof by 90&deg;. The phase shifting and non-phase shifting regions are positioned so that the images of the outlines provided by a lens on an object shit in position a substantial amount as the distance between the lens and the object is changed.

Phase grating focus monitor using overlay technique

An attenuated phase shift mask utilizes a multilayer which has been locally modified. Heat treatment or e-beam treatment can locally modify the multilayer to provide different reflective characteristics. The attenuated phase shift mask can be utilized in EUV applications.

Attenuated phase shift mask for use in EUV lithography and a method of making such a mask

An inspection tool or inspection system can be utilized to determine whether the appropriate pattern is on a reticle. The reticle can be associated with EUV lithographic tools. The system utilizes at least two wavelengths of light. The light is directed to the reticle at the at least two wavelengths of light and detected by a detector. The image associated with the first wavelength is subtracted from or otherwise processed with respect to the image associated with the second wavelength to improve contrast ratio.

Differential wavelength inspection system

An inspection tool or inspection system can be utilized to determine whether the appropriate pattern is on a reticle. The reticle can be associated with EUV lithographic tools. The system can utilize at least two pulse durations of light or an ultra-short pulse duration of light. The light is directed to the reticle and received by a detector.

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San Diego, CA, United States of America

Bruno M La Fontaine