Nova Measuring Instruments Ltd.

Revera, Incorporated

Bruce H Newcome

David Allen Reed

Bruno W Schueler

Rodney C Smedt

Chris Bevis

Jeffrey Allen Moore

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

Patterned x-ray emitting target

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

A method and a system for calibrating an X-ray photoelectron spectroscopy (XPS) measurement are described. The method includes using an X-ray beam to generate an XPS signal from a sample and normalizing the XPS signal with a measured or estimated flux of the X-ray beam. The system includes an X-ray source for generating an X-ray beam and a sample holder for positioning a sample in a pathway of the X-ray beam. A detector is included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. Also included are a flux detector for determining a measured or estimated flux of the X-ray beam and a computing system for normalizing the XPS signal with the measured or estimated flux of the X-ray beam.

Method and system for calibrating an X-ray photoelectron spectroscopy measurement

According to one aspect of the invention a robust anode structure and methods of making and using said structure to produce ionizing radiation are disclosed. An ionizing radiation producing layer is bonded to the target side of a highly conductive diamond substrate, by a metal carbide layer. The metal carbide layers improves the strength and durability of the bond, thus improving heat removal from the anode surface and reducing the risk of delaminating the ionizing radiation producing layer, thus reducing degradation and extending the anode's life. A smoothing dopant is alloyed into the radiation producing layer to facilitate keeping the layer surface smooth, thus improving the quality of the x-ray beam emitted from the anode. In an embodiment, the heat sink comprises a metal carbide skeleton cemented diamond material. In another embodiment, the heat sink is bonded to the diamond substrate structure in a high temperature reactive brazing process.

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Sunnyvale, CA, United States of America

Bruce H Newcome