Applied Materials, Inc.

Bridger Earl Hoerner

Siew Kit Hoi

Yaoying Zhong

Daniel J Woodruff

Paul R McHugh

Todd J Egan

Randy Harris

Edward W Budiarto

Thomas H Oberlitner

Abraham Ravid

Robert W Batz, Jr

Marvin L Bernt

Richard W Plavidal

Brian Aegerter

Adam Marc McClure

Andrew Anten

Robert O Miller

Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.

Programmable electrostatic chuck to enhance aluminum film morphology

Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.

Programmable ESC to enhance aluminum film morphology

Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.

Systems and methods for wetting substrates

An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Electroplating tool with feedback of metal thickness distribution and correction

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Columbia Falls, MT, United States of America

Bridger Earl Hoerner