Intel Corporation

Other

Tahoe Research, Ltd.

Intel Corporationn

Brian S Doyle

Robert S Chau

Jack T Kavalieros

Mark L Doczy

Suman Datta

Uday Shah

Ravi Pillarisetty

Kaan Oguz

Charles C Kuo

Elijah V Karpov

Justin K Brask

Prashant Majhi

Abhishek A Sharma

Kevin O'Brien

Been-Yih Jin

David L Kencke

Satyarth Suri

Scott A Hareland

Amlan Majumdar

Brian E Roberds

Marko Radosavljevic

Matthew V Metz

Anand S Murthy

Peng Cheng

Christopher J Wiegand

Tahir Ghani

Oleg Golonzka

Justin Brockman

Niloy Mukherjee

Boyan Boyanov

Chunlin Liang

Willy Rachmady

Gilbert W Dewey

Dinesh Somasekhar

David B Fraser

Gang Bai

Steven J Keating

Vivek K De

Rafael Rios

Peter L D Chang

Titash Rakshit

Sasikanth Manipatruni

Van H Le

Roza Kotlyar

Shaofeng Yu

Nick Lindert

Aleksandar Aleksov

Dmitri E Nikonov

Ravindranath Vithal Mahajan

Christopher J Jezewski

Swaminathan Sivakumar

Ali Keshavarzi

Chris E Barns

Quat T Vu

Michael L McSwiney

Shawna M Liff

Yih Wang

Kramadhati V Ravi

Vivek K Singh

Jun-Fei Zheng

Nadia M Rahhal-Orabi

Urusa Alaan

Arnab Sen Gupta

Ian A Young

Han Wui Then

Sansaptak W Dasgupta

Benjamin Chu-Kung

Mark T Bohr

Muhammad M Khellah

Shih-Lien L Lu

Fabrice Paillet

Yibin Ye

Stephen H Tang

Richard E Schenker

Seung Hoon Sung

Noriyuki Sato

James W Tschanz

Rami Hourani

James M Blackwell

Wilfred Gomes

Ilya V Karpov

Sey-Shing Sun

Jin Hyung Lee

Yuegang Zhang

Eric R Dickey

Peter G Tolchinsky

Markus Kuhn

Mohamad A Shaheen

Tejaswi K Indukuri

Nancy M Zelick

Kevin X Zhang

Fatih Hamzaoglu

Timothy J Maloney

Chien Chiang

Francisco A Leon

Martin D Giles

Ramanan Chebiam

Leopoldo D Yau

Anup Pancholi

Justin R Weber

Embodiments disclosed herein include semiconductor devices with Schottky diodes in a back end of line stack. In an embodiment, a semiconductor device comprises a semiconductor layer, where transistor devices are provided in the semiconductor layer, and a back end stack over the semiconductor layer. In an embodiment, a diode is in the back end stack. In an embodiment, the diode comprises a first electrode, a semiconductor region over the first electrode, and a second electrode over the semiconductor region. In an embodiment, a first interface between the first electrode and the semiconductor region is an ohmic contact, and a second interface between the semiconductor region and the second electrode is a Schottky contact.

Compositional engineering of Schottky diode

Described herein are integrated circuit (IC) devices that include devices that include fin-based field-effect transistors (FinFETs) integrated over gate-all-around (GAA) transistors. The GAA transistors may serve to provide high-performance compute logic, and may be relatively low-voltage transistors, while FinFETs may be more suitable than GAA transistors for providing high-voltage transistors, and, therefore, may serve to provide peripheral logic for backend memory arrays implemented over the same support structure over which the GAA transistors and the FinFETs are provided. Such an arrangement may address the fundamental voltage incompatibility by integrating a mix of FinFETs and GAA transistors in stacked complimentary FET (CFET) architecture to enable embedded 1T-1X based memories.

Integrated circuit devices with FinFETs over gate-all-around transistors

Integrated circuit (IC) assemblies with stacked compute logic and memory dies, and associated systems and methods, are disclosed. One example IC assembly includes a compute logic die and a stack of memory dies provided above and coupled to the compute logic die, where one or more of the memory dies closest to the compute logic die include memory cells with transistors that are thin-film transistors (TFTs), while one or more of the memory dies further away from the compute logic die include memory cells with non-TFT transistors. Another example IC assembly includes a similar stack of compute logic die and memory dies where one or more of the memory dies closest to the compute logic die include static random-access memory (SRAM) cells, while one or more of the memory dies further away from the compute logic die include memory cells of other memory types.

Integrated circuit assemblies with stacked compute logic and memory dies

Embodiments disclosed herein include semiconductor devices with electrostatic discharge (ESD) protection of the transistor devices. In an embodiment, a semiconductor device comprises a semiconductor substrate, where a transistor device is provided on the semiconductor substrate. In an embodiment, the semiconductor device further comprises a stack of routing layers over the semiconductor substrate, and a diode in the stack of routing layers. In an embodiment, the diode is configured to provide electrostatic discharge (ESD) protection to the transistor device.

ESD protection decoupled from diffusion

A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises the first material, wherein the second structure is between the first and third structures.

Backend electrostatic discharge diode apparatus and method of fabricating the same

Embodiments may relate to a microelectronic package that includes a first plurality of memory cells of a first type coupled with a substrate. The microelectronic package may further include a second plurality of memory cells of a second type communicatively coupled with the substrate such that the first plurality of memory cells is between the substrate and the second plurality of memory cells. Other embodiments may be described or claimed.

Monolithic memory stack

A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.

Method for fabricating transistor with thinned channel

A ferroelectric field-effect transistor (FeFET) includes first and second gate electrodes, source and drain regions, a semiconductor region between and physically connecting the source and drain regions, a first gate dielectric between the semiconductor region and the first gate electrode, and a second gate dielectric between the semiconductor region and the second gate electrode. The first gate dielectric includes a ferroelectric dielectric. In an embodiment, a memory cell includes this FeFET, with the first gate electrode being electrically connected to a wordline and the drain region being electrically connected to a bitline. In another embodiment, a memory array includes wordlines extending in a first direction, bitlines extending in a second direction, and a plurality of such memory cells at crossing regions of the wordlines and the bitlines. In each memory cell, the wordline is a corresponding one of the wordlines and the bitline is a corresponding one of the bitlines.

Double-gated ferroelectric field-effect transistor

A transistor, including an antiferroelectric (AFE) gate dielectric layer is described. The AFE gate dielectric layer may be crystalline and include oxygen and a dopant. The transistor further includes a gate electrode on the AFE gate dielectric layer, a source structure and a drain structure on the substrate, where the gate electrode is between the source structure and the drain structure. The transistor further includes a source contact coupled with the source structure and a drain contact coupled with the drain structure.

Antiferroelectric gate dielectric transistors and their methods of fabrication

Thin film tunnel field effect transistors having relatively increased width are described. In an example, integrated circuit structure includes an insulator structure above a substrate. The insulator structure has a topography that varies along a plane parallel with a global plane of the substrate. A channel material layer is on the insulator structure. The channel material layer is conformal with the topography of the insulator structure. A gate electrode is over a channel portion of the channel material layer on the insulator structure. A first conductive contact is over a source portion of the channel material layer on the insulator structure, the source portion having a first conductivity type. A second conductive contact is over a drain portion of the channel material layer on the insulator structure, the drain portion having a second conductivity type opposite the first conductivity type.

Thin film tunnel field effect transistors having relatively increased width

Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit

AS-T ferroelectric memory cell is provided that include a transistor and a two-terminal selector device. The transistor exhibits a low conductive state and a high conductive state (channel resistance), depending on drive voltage. The two-terminal selector device exhibits one of an ON-state and an OFF-state depending upon whether the transistor is in its low conductive state or its high conductive state. The transistor may be, for instance, a ferroelectric gate vertical transistor. Modulation of a polarization state of ferroelectric material of the vertical transistor may be utilized to switch the state of the selector device. The memory cell may thus selectively be operated in one of an ON-state and an OFF-state depending upon whether the selector device is in its ON-state or OFF-state.

1S-1T ferroelectric memory

Ferroelectric field effect transistors (FeFETs) having band-engineered interface layers are described. In an example, an integrated circuit structure includes a semiconductor channel layer above a substrate. A metal oxide material is on the semiconductor channel layer, the metal oxide material having no net dipole. A ferroelectric oxide material is on the metal oxide material. A gate electrode is on the ferroelectric oxide material, the gate electrode having a first side and a second side opposite the first side. A first source/drain region is at the first side of the gate electrode, and a second source/drain region is at the second side of the gate electrode.

Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer

IC device including back-end-of-line (BEOL) transistors with crystalline channel material. A BEOL crystalline seed may be formed over a dielectric layer that has been planarized over a front-end-of-line (FEOL) transistor level that employs a monocrystalline substrate semiconductor. The BEOL crystalline seed may be epitaxial to the substrate semiconductor, or may have crystallinity independent of that of the substrate semiconductor. The BEOL crystalline seed may comprise a first material having a higher melt temperature than a melt material formed over the seed and over the dielectric layer. Through rapid melt growth, the melt material may be heated to a temperature sufficient to transition from an as-deposited state to a more crystalline state that is derived from, and therefore associated with, the BEOL crystalline seed. A BEOL transistor may then be fabricated from the crystallized material.

IC including back-end-of-line (BEOL) transistors with crystalline channel material

Embedded non-volatile memory structures having double selector elements are described. In an example, a memory device includes a word line. A double selector element is above the word line. The double selector element includes a first selector material layer, a second selector material layer different than the first selector material layer, and a conductive layer directly between the first selector material layer and the second selector material layer. A bipolar memory element is above the word line. A conductive electrode is between the double selector element and the bipolar memory element. A bit line is above the word line.

Double selector element for low voltage bipolar memory devices

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Cupertino, CA, United States of America

Brian S Doyle