Exo Imaging, Inc.

Fairchild Semiconductor Corporation

Brian Lee Bircumshaw

Sandeep Akkaraju

Haesung Kwon

Janusz Bryzek

Yusuf Haque

Daniela Marisa Fredrick

Charles Edward Baumgartner

Joseph Michael Adam

David Lambe Marx

Thomas Stephen Tarter

James Alan Ewanich

Jon Henry LeFors

Naresh Mantravadi

Yusef Haque

An imaging device includes a two dimensional array of piezoelectric elements. Each piezoelectric element includes: a piezoelectric layer; a bottom electrode disposed on a bottom side of the piezoelectric layer and configured to receive a transmit signal during a transmit mode and develop an electrical charge during a receive mode; and a first top electrode disposed on a top side of the piezoelectric layer; and a first conductor, wherein the first top electrodes of a portion of the piezoelectric elements in a first column of the two dimensional array are electrically coupled to the first conductor.

Configurable ultrasonic imager

Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.

Micro-machined ultrasound transducers with insulation layer and methods of manufacture

Disclosed are multi-poled piezoelectric devices with improved packing density and methods for making such multi-poled piezoelectric devices with improved packing density. The multi-poled piezoelectric devices comprise: a) a top electrode, a piezoelectric layer, and a bottom electrode fabricated on a substrate; b) vias generated by etching the piezoelectric layer, the top electrode, or both; and c) a re-distribution layer (RDL) deposited over one or more of: the top electrode, the piezoelectric layer, the bottom electrode, or the one or more vias.

High density multi-poled thin film piezoelectric devices and methods of making the same

Disclosed herein are ultrasonic transducer systems with hybrid contacts comprising: an ultrasonic transducer element comprising a substrate and a membrane; an electrical circuitry; and one or more contacts connected to the ultrasonic transducer element and the electrical circuitry, wherein the one or more contacts are: designed geometrically using a set of rules; arranged with respect to the membrane based on the set of rules or a second set of rules, or both.

Systems and methods for integrating ultrasonic transducers with hybrid contacts

The present disclosure provides methods to integrate piezoelectric micromachined ultrasonic transducer (pMUT) arrays with an application-specific integrated circuit (ASIC) using thermocompression or eutectic/solder bonding. In an aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT array and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using thermocompression, wherein any set of individual PMUTs of PMUT array is addressable. In another aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT array and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using eutectic or solder bonding, wherein any set of individual PMUTs of the PMUT array is addressable.

Integration techniques for micromachined pMUT arrays and electronics using thermocompression bonding, eutectic bonding, and solder bonding

Described are acoustic absorber materials with high acoustic attenuation and high thermal conductivity comprising an inorganic, porous foam and an absorbing material within at least a portion of the pores of the foam, ultrasound transducers and devices including the same, as well as methods of making the materials.

Ultrasound transducer with acoustic absorber structure

Described are ultrasound transducer modules and handheld ultrasound imagers including thermal and acoustic management features to produce high quality ultrasound images in a portable, handheld form factor.

Handheld ultrasound imager

Disclosed herein are ultrasonic transducer systems comprising: an ultrasonic transducer comprising a substrate, a diaphragm, and a piezoelectric element; a first electrical circuitry coupled to the ultrasonic transducer, the first electrical circuitry configured for driving the ultrasonic transducer or detecting motion of the diaphragm; a plurality of electrical ports coupled to the ultrasonic transducer; and a second electrical circuitry connected to two or more of the plurality of electrical ports, the electrical circuitry comprising one or more of: a resistor, a capacitor, a switch, and an amplifier, wherein the second electrical circuitry is independent from the first electrical circuitry, and wherein the second electrical circuitry is configured to dampen the motion of the diaphragm.

Ultrasonic transducers with Q spoiling

An imaging device includes a transducer that includes an array of piezoelectric elements formed on a substrate. Each piezoelectric element includes at least one membrane suspended from the substrate, at least one bottom electrode disposed on the membrane, at least one piezoelectric layer disposed on the bottom electrode, and at least one top electrode disposed on the at least one piezoelectric layer. Adjacent piezoelectric elements are configured to be isolated acoustically from each other. The device is utilized to measure flow or flow along with imaging anatomy.

Ultrasonic imaging device with programmable anatomy and flow imaging

An array of micromachined ultrasonic transducers (MUTs). The array has first and second rows, the MUTs in the first row being equally spaced by a horizontal pitch in a horizontal direction, the MUTs in the second row being equally spaced by the horizontal pitch in the horizontal direction. The MUTs in the second row are shifted along the horizontal direction by a first horizontal distance relative to the MUTs in the first row and shifted along a vertical direction by a first vertical distance relative to the MUTs in the first row. The first horizontal distance is greater than zero and less than the horizontal pitch. The first vertical distance ranges from one tenth of a horizontal width of a MUT to a half of a vertical height of a MUT.

Asymmetrical ultrasound transducer array

Methods for improving the electromechanical coupling coefficient and bandwidth of micromachined ultrasonic transducers, or MUTs, are presented as well as methods of manufacture of the MUTs improved by the presented methods.

Increased MUT coupling efficiency and bandwidth via edge groove, virtual pivots, and free boundaries

Described are micromachined ultrasonic transducers (MUTs) with convex or concave electrodes, which have enhanced pressure amplitude and frequency response behavior when driven at fundamental and harmonic frequencies, as well as methods of making the same.

Imaging devices having piezoelectric transceivers with harmonic characteristics

A micromachined ultrasonic transducer (MUT) which comprises a first piezoelectric layer and a second piezoelectric layer. The first piezoelectric layer is disposed between a first electrode and a second electrode. The second piezoelectric layer is disposed between the second electrode and a third electrode. At least the first electrode has first and second ends along a first axis, one or more of which is defined by a radius of curvature R. A second axis normal to the first passes through a midpoint of the first axis. A half-width of the first electrode is defined by a length L measured from the midpoint, in the direction of the second axis, to an outer perimeter of the first electrode. A total width of the first electrode at its narrowest point along the first axis is at most 2L such that the first electrode has a concave shape. R/L, is greater than 1.

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Redwood City, CA, United States of America

Brian Lee Bircumshaw