International Business Machines Corporation

Brian James Yavoich

John D Davis

Paul Alan Bunce

Russell P Hayes

Yuen H Chan

Tobias Werner

Silke Penth

David Edward Schmitt

Antonio R Pelella

Dongho Lee

Zhiying Chen

Genadi Tverskoy

Aspects of the invention include a first pull-down device and a second pull-down device, wherein a first drain terminal is connected to a second source terminal, and wherein a first gate terminal is connected to a true read local bitline, wherein a second drain terminal is connected to a compliment read local bit line, and wherein a second gate terminal is connected to a true write global bitline, a third pull-down device and a fourth pull-down device, wherein a third source terminal is connected to the voltage supply, wherein a third drain terminal is connected to a fourth source terminal, and wherein a third gate terminal is connected to the compliment read local bitline, and wherein a fourth drain terminal is connected to the true read local bitline, and wherein a fourth gate terminal is connected to a compliment write global bit line.

Local bit select with improved fast read before write suppression

Embodiments of the present invention are directed to methods, systems, and circuitry for reduced error in power consumption estimation for distinct circuitries. A non-limiting example includes distinct circuitry having an optimized power consumption definition. The distinct circuitry includes a substrate. The distinct circuitry includes an arrangement of interoperable hardware components disposed on the substrate having input pins defined according to a model described by a hardware description language operable to emulate toggle events of the interoperable hardware components defined by the model having a toggle event count based on combinations of the toggle events that correspond to predetermined power quantities. The toggle events define an aggregate toggle power consumption closer to an actual power consumption than an aggregate pin power consumption based on the input pins.

Memory array having power consumption characteristics

A method for testing a circuit includes receiving, by a noise injection circuit, an input signal and generating a noise pulse. Generating the noise pulse includes computing an input resistor pulse, and computing an output resistor pulse. Generating the noise pulse further includes short-circuiting an output resistor substantially simultaneously with opening an input resistor. The method for testing the circuit includes modifying, by the noise injection circuit, the input signal using the noise pulse.

Noise injection circuit

An aspect a bit selection path configured to propagate a bit selection signal. The bit selection path includes bit selection delay circuitry defining a bit selection delay. The memory array includes a row selection path configured to propagate a row selection signal. The row selection path includes row selection delay circuitry defining a row selection delay. The memory array includes local selection circuitry. The local selection circuitry is configured to receive the bit selection signal from the bit selection path before the row selection signal from the row selection path according to the bit selection delay and the row selection delay.

Random-access memory array memory cell selection

According to one or more embodiments of the present invention, a delay circuit includes a first sub-circuit that delays a leading edge of an input signal according to first control settings, the input signal being for an electric device. The delay circuit further includes a second sub-circuit that delays a trailing edge of the input signal according to second control settings. An output signal from the delay circuit is received by the electric device.

Fine-grained programmable delay and pulse shaping circuit

A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Dual mode operation having power saving and active modes in a stacked circuit topology with logic preservation

A memory array can include a global evaluation circuit, a local evaluation circuit for evaluating a voltage level of a local bit line and a wake transistor configured to connect an output of the local evaluation circuit to a global bit line (GBL) of the global evaluation circuit. The global evaluation circuit can include a holding circuit. The wake transistor can be turned on in response to a read signal, and remain on while the GBL is precharged to a logical 'high' voltage. Memory cells connected to the at least one local bit line can be addressed, and the local bit line can be pulled to a logical 'low' voltage for a first time period. The GBL can be pulled to a logical low voltage for a second time period, and the holding circuit polarity can be reversed during a third time period.

Managing semiconductor memory array leakage current

A column access control circuit for generating column write enable outputs with redundancy steering control and bit write control for an integrated circuit chip, and an integrated circuit chip having the same. A column access control circuit may include: a column write enable driver, a redundancy steering logic, and a bit write controller. The column write enable driver may produce column write enable outputs through an output. The column write enable driver is configured to receive certain column interleave write enable and enable column write according to the column interleave write enable received. The redundancy steering logic is configured to receive one or more fuses and skip a damaged column indicated by a corresponding fuse. The bit write controller is configured to receive one or more bit write and provide bit write control according to the one or more bit write received.

Growing community of inventors

Highland, NY, United States of America

Brian James Yavoich