Applied Materials, Inc.

Bradley Scott Hersch

Anisul Haque Khan

Wen Teh Chang

Xiawan Yang

Gaurav Saraf

Farid Abooameri

Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset &#x394;&#x3b1; in tilt angle &#x3b1; between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset &#x394;&#x3b1;.

Method of matching two or more plasma reactors

Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset &#x394;&#x3b1; in tilt angle &#x3b1; between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset &#x394;&#x3b1;.

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Park City, UT, United States of America

Bradley Scott Hersch