International Business Machines Corporation

Bradley A Omer

Douglas Duane Coolbaugh

Jeffrey Bowman Johnson

Robert Mark Rassel

James Spiros Nakos

Peter James Lindgren

David Charles Sheridan

Xuefeng Lie

A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.

Silicided trench contact to buried conductive layer

Growing community of inventors

Fairfax, VT, United States of America

Bradley A Omer