Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Boxiu Cai

Yi Huang

Yanlei Zu

A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; forming a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center alone a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.

Photolithography alignment mark structures and semiconductor structures

A method is provided for fabricating a photolithographic mask. The method includes providing a transparent substrate; and forming an opaque layer on the transparent substrate. The method also includes writing layout patterns with at least one sub-resolution assistant feature with non-uniform size along a longitudinal direction to increase an adhesion force between the sub-resolution assistant feature with non-uniform size along the longitudinal direction and the transparent substrate in the opaque layer. Further, the method include cleaning residual matters generated by writing the layout patterns in the opaque layer. Further, the method also includes spin-drying the transparent substrate with the layout patterns and the sub-resolution assistant feature with non-uniform size along the longitudinal direction.

Photolithographic mask

Photolithographic mask and fabrication method thereof

The present disclosure includes a method for optical measurements. The method includes providing a substrate with a structure for optical measurement on the substrate; and illuminating a light spot on the structure for optical measurement to obtain a measured light scattering spectrum. The method also includes performing a first matching process to obtain a plurality of matching standard optical scattering spectra and a plurality of first matching degrees, each standard optical scattering spectrum corresponding to one first matching degree; obtaining a plurality of combined optical scattering spectra based on the plurality of matching standard optical scattering spectra; and performing a second matching process to obtain a plurality second matching degree, each corresponding to one combined optical scattering spectrum.

Method and system for optical measurements

A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; thrilling a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center along a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.

Photolithography alignment mark structures, semiconductor structures, and fabrication method thereof

A laser annealing device for compensating wafer heat maps and its method are disclosed. A laser annealing device comprises a pump laser source array including of a plurality of pump laser sources for irradiating a tunable mask, each pump laser source emitting pump laser, an annealing laser source for emitting annealing laser and irradiating the tunable mask, and a tunable mask for transmitting at least part of the annealing laser after being irradiated by the pump laser.

Laser annealing device including tunable mask and method of using the same

A photolithographic mask is provided. The photolithographic mask includes a substrate having a first surface configured as a light incidence plane of an exposure light and a second surface. The photolithographic mask also includes a plurality of scattering centers functioning as a refractive index disturbance inside the substrate. Further, the photolithographic mask includes a plurality of mask patterns on the second surface of the substrate.

Photolithographic masks and fabrication method thereof

A method for monitoring the source symmetry of a photolithography system is provided. The method includes providing a first reticle; and providing a second reticle. The method also includes forming first bottom overlay alignment marks on a first wafer using the first reticle; and forming first top overlay alignment marks on the first bottom overlay alignment marks using the second reticle. Further, the method includes forming second bottom overlay alignment marks on a second wafer using the first reticle; and forming second top overlay alignment marks on the second bottom overlay alignment marks using the second reticle. Further, the method also include measuring a first overlay shift; measuring a second overlay shift; and obtaining an overlay shift caused by the source asymmetry based on the first overlay shift and the second overlay shift.

Methods for monitoring source symmetry of photolithography systems

Laser annealing device and method

A method may be implemented for obtaining calibration data for use in calibrating an optical proximity correction model. The method may include capturing an image for each portion of a plurality of portions of a wafer to obtain captured images. The method may further include assembling at least portions of the captured images to form an assembled image. The method may further include mapping layout data of the wafer with the assembled image. The method may further include selecting portions of the assembled image based on the layout data of the wafer. The method may further include obtaining data associated with the portions of the assembled image as the calibration data.

Method and system for obtaining optical proximity correction model calibration data

A standard wafer is provided including a substrate; a first layer of semiconductor material formed on the substrate; a bar formed over the first layer of semiconductor material with an interlayer interposed therebetween; and a first sidewall spacer and a second sidewall spacer formed on the opposite sides of the bar respectively, in which the bar and the first layer of semiconductor material are formed of a same semiconductor material, and the interlayer interposed between the first layer of semiconductor material and the bar is formed of a first oxide, and the first sidewall spacer and the second sidewall spacer are formed of a second oxide. A corresponding fabrication method of the standard wafer is also provided.

Standard wafer and its fabrication method

A method and an apparatus for monitoring an electron beam condition of an SEM are provided. The SEM includes an electron gun and an electromagnetic lens system. The method includes acquiring quality parameters of an input electron beam, wherein the input electron beam is provided by the electron gun to the electromagnetic lens system, acquiring a current set of operation parameters of the electromagnetic lens system, calculating quality parameters of an output electron beam of the electromagnetic lens system, based on the quality parameters of the input electron beam and one or more operation parameters of the current set of operation parameters, and determining, based on the quality parameters of the output electron beam, whether calibration of the SEM is required.

Method and apparatus for monitoring electron beam condition of scanning electron microscope

Methods for detecting an electron beam of a SEM and for detecting fine patterns are provided. Line patterns having a length in a first direction can be formed on a detection sample. A power spectral density (PSD) curve of a standardized model, formed under a same exposure process of the detection sample, can be obtained. An edge contour of each line pattern of the detection sample can be obtained by the SEM and can be sampled at a sampling frequency to obtain a variation range at a sampling point on the edge contour in a second direction that is perpendicular to the first direction. A PSD curve of the detection sample can be obtained according to the variation range and can be compared with the PSD curve of the standardized model to determine whether an electron beam of the SEM has a high quality in the second direction.

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Shanghai, China

Boxiu Cai