Tokyo Electron Limited

Boui Ikeda

Masato Hayashi

Eiichi Sekimoto

Shoichiro Hidaka

Kazuya Iwanaga

There is provided a substrate processing apparatus, including: a substrate holder configured to hold a substrate with a surface of the substrate on which a concavo-convex pattern is formed oriented upward; a liquid supply unit configured to supply a processing liquid to the substrate held by the substrate holder to form a liquid film at least in a concave portion of the concavo-convex pattern; a heating unit configured to irradiate the substrate held by the substrate holder or the liquid film with a laser beam for heating the liquid film; and a heating controller configured to control the heating unit, wherein the heating controller controls the heating unit to expose the entire concave portion in a depth direction from the processing liquid by irradiating the laser beam onto the substrate or the liquid film from the heating unit.

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Koshi, Japan

Boui Ikeda