Intel Corporation

Borna Obradovic

Rafael Rios

Martin D Giles

Mark Stettler

Method and structure to decrease area capacitance within a buried insulator device structure are disclosed. A portion of the substrate layer of a buried insulator structure opposite the insulator layer from the gate is doped with the same doping polarity as the source and drain regions of the device, to provide reduced area capacitance. Such doping may be limited to portions of the substrate which are not below the gate.

Method and structure to decrease area capacitance within a buried insulator device

Method to form a structure to decrease area capacitance within a buried insulator device structure is disclosed. A portion of the substrate layer of a buried insulator structure opposite the insulator layer from the gate is doped with the same doping polarity as the source and drain regions of the device, to provide reduced area capacitance. Such doping may be limited to portions of the substrate which are not below the gate.

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Hillsboro, OR, United States of America

Borna Obradovic