Ntu Ventures Pte. Ltd.

Boon Siew Ooi

Yan Zhou

Yee Loy Lam

Yuen Chuen Chan

Siu Chung Tam

The present invention provides a novel technique based on gray scale mask patterning ( ), which requires only a single lithography and etching step ( ) to produce different thickness of SiO implantation mask ( ) in selected regions followed by a one step IID ( ) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer ( ). This enables not only the integration of monolithic multiple-wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

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Penang, Malaysia

Boon Siew Ooi