Samsung Electronics Co., Ltd.

Boo-deuk Kim

Young-ho Kim

Kyoung-mi Kim

Jin-A Ryu

Young-Ho Kim

Jae-Ho Kim

Jae-ho Kim

Hyo-Jin Yun

Chang-Ho Lee

Jae-Hyun Kim

Do-Young Kim

Dong-jun Lee

Myung-Sun Kim

Yun-seok Choi

Seok Min Han

Yool Kang

Min-Jung Kim

Jung-sik Choi

Jung-hoon Kim

Soo-Kyung Kim

Dong-Won Shin

Jeong-ju Park

Youn-Kyung Wang

Sang-Woong Yoon

Yeu-Young Youn

Ye-hwan Kim

Jae-Hee Choi

Nae-ry Yu

Song-se Yi

Ji-Man Park

Kyoung-Min Kim

Se-kyung Baek

Shi-Yong Lee

Won-Mi Kim

Seok-Bong Park

Ji-Yun Ham

Kyoung-sil Park

A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

Method of forming patterns for semiconductor device

Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Hard mask composition for spin-coating

A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same

A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.

Method of forming patterns of semiconductor device

In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Methods of forming a pattern of a semiconductor device

In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Method of forming a pattern and method of manufacturing a capacitor using the same

Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.

Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition

In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.

Photoresist composition and method of forming a photoresist pattern using the same

A photoresist composition for preventing exposing failures and a method of forming a pattern using the same are disclosed. The photoresist composition preferably comprises about 0.1% to about 0.5% by weight of a photo acid generator, and about 2% to about 10% by weight of a polymer resin, the PAG including a monophenyl sulfonium compound, a triphenyl sulfonium compound or a mixture thereof. The footing phenomenon and the top loss of a pattern are sufficiently prevented.

Photoresist composition and method of forming a pattern using same

A silicone hyper-branched polymer surfactant is included in a rinsing solution which may be used to remove photoresist residues. The silicone hyper-branched polymer surfactant is prepared by polymerizing a monomer represented by the following chemical formula (1), where Rdenotes a vinyl group and Rdenotes hydrogen, and includes both a hydrophobic group and a hydrophilic group 

Silicone hyper-branched polymer surfactant, method of preparing the same and method of rinsing using a rinsing solution comprising the same

An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula,wherein R represents a photoacid generator is disclosed.

Adhesive compound and method for forming photoresist pattern using the same

In a semiconductor device fabrication method and in a product formed according to the method, a photosensitive polyimide layer (PSPL) layer is applied to a semiconductor device in a manner which overcomes the limitations of the conventional approaches. The beneficial qualities of an added photoresist layer are utilized to avoid unwanted development of the underlying PSPL layer. In this manner, cracking of the PSPL layer is mitigated or eliminated, reducing the device soft error rate (SER) and increasing device yield. This is accomplished in a reliable and low-cost approach that employs standard device fabrication techniques.

Method of fabricating a semiconductor device having a photo-sensitive polyimide layer and a device fabricated in accordance with the method

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Suwon-si, South Korea

Boo-deuk Kim