Huawei Technologies Co., Limited

Huawei Digital Power Technologies Co., Ltd.

Boning Huang

Bo Gao

Fei Hu

Dianbo Fu

Peng Zhang

Wentao Yang

Yanzhong Zhang

Grover Victor Torrico-Bascopé

Zhaozheng Hou

Quan Zhang

Kui Zhou

Zhen Qin

Hui Sun

Zheng Ma

Wenbin Chen

Jing Yang

Tao Luo

Shengyong Dai

Qimeng Jiang

Junhe Wang

Peng Zou

Wenping Tong

Hanxing Wang

Qian Zhao

Yuxi Wan

Fayou Yin

Jianquan Wu

Xiaming Jing

Weubin Chen

Qilong Bao

Gaofei Tang

Fanglin Li

Chia Fu Liu

Zhibin Chen

Zhihua Liu

Embodiments of this application relate to the field of semiconductor technologies, and provide composite substrate that comprises: a first silicon carbide layer comprising monocrystalline silicon carbide, and a second silicon carbide layer bonded to the first silicon carbide layer, wherein defect density of at least a part of the second silicon carbide layer is greater than defect density of the first silicon carbide layer.

Composite substrate, composite substrate preparation method, semiconductor device, and electronic device

The technology of this disclosure relates to an IGBT chip integrating a temperature sensor, and relates to the field of power device technologies, to improve accuracy of temperature monitoring of the IGBT chip. The IGBT chip integrating the temperature sensor includes a cell region, an emitter pad, a gate pad, a gate finger structure, a temperature sensing module, and a conductive shielding structure. The emitter pad is electrically connected to emitters of a plurality of IGBT cells. The gate finger structure is connected between the gate pad and gates of the plurality of IGBT cells. The temperature sensing module includes a temperature sensor, an anode pad, a cathode pad, and a metal lead. The temperature sensor and at least a part of the metal lead are located in the gate finger structure and are insulated from the gate finger structure.

IGBT chip integrating temperature sensor

A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.

DrMOS, integrated circuit, electronic device, and preparation method

The invention disclose a power supply circuit. The power supply circuit includes one or a plurality of first-stage voltage conversion circuits and one or a plurality of second-stage voltage conversion circuits; an input end of the first-stage voltage conversion circuit is coupled to a power supply; the first-stage voltage conversion circuit is configured to convert a first voltage received at the input end into a second voltage, where the second voltage is less than the first voltage; an input end of the second-stage voltage conversion circuit is coupled to an output end of the first-stage voltage conversion circuit; the second-stage voltage conversion circuit is configured to convert the second voltage into a third voltage, and supply the third voltage to a load.

Power supply circuit and power supply control method

This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P&#x2014;GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P&#x2014;GaN cap layer. A Schottky contact is formed between the first gate metal and the P&#x2014;GaN cap layer, and an ohmic contact is formed between the second gate metal and the P&#x2014;GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.

Gallium nitride component and drive circuit thereof

Embodiments of a degradation phenomenon treatment method based on a photovoltaic module and a related device are disclosed. A high frequency signal is applied to the photovoltaic module when a degradation phenomenon occurs in the photovoltaic module to protect the photovoltaic module and suppress or eliminate the degradation phenomenon. The degradation phenomenon refers to degradation of electricity generation efficiency of the photovoltaic module under effect of an electric potential. Embodiments of the degradation phenomenon treatment method and the device resolve issues associated with a declined electrical energy conversion capability and decreased electricity generation efficiency of a photovoltaic module caused by a surface polarization phenomenon, a potential induced degradation (PID) phenomenon occurring in the photovoltaic module, or both.

Degradation phenomenon treatment method based on photovoltaic module, and related device

Disclosed herein is a distributed battery pack power supply system, a charging control method, and a discharging control method, where a plurality of battery packs or battery groups is directly coupled in parallel or indirectly coupled in parallel as required using a charging/discharging circuit of the distributed battery pack power supply system and a corresponding control policy. A distributed battery includes a plurality of battery packs, and further includes a controller, a bidirectional voltage transformation circuit, a bypass circuit, a charging circuit, and a charging input end. Each battery pack corresponds to one bypass circuit and one bidirectional voltage transformation circuit.

Distributed battery, battery control method, and electric vehicle

A resonant converter circuit comprises a multi-level inverter circuit placed before a resonant unit, and the multi-level inverter circuit can reduce a voltage to be input to the resonant unit. The reduced input voltage of the resonant unit results in a drop in an output voltage of the entire resonant converter circuit. In this process, the final output voltage is adjusted by adjusting the input voltage of the resonant unit, with no need to substantially adjust a switching frequency of the resonant converter circuit.

Resonant converter circuit and resonant converter circuit control method

A power supply bus circuit includes a high-voltage power supply circuit, the high-voltage power supply circuit includes at least two first alternating current/direct current converters and further includes at least two high-voltage direct current power supply buses, and the first alternating current/direct current converter connects to mains, adjusts the connected mains into a high-voltage direct current, and outputs the high-voltage direct current to the high-voltage direct current power supply bus that is electrically connected to the first alternating current/direct current converter, where the high-voltage power supply circuit further includes at least one first direct current/direct current converter, where the first direct current/direct current converter performs voltage conversion on the high-voltage direct current between two high-voltage direct current power supply buses connected to the first direct current/direct current converter.

Power supply bus circuit

A bridgeless power factor correction (PFC) circuit, which includes an alternating current power supply module, a power module, and a control module; the power module includes one or more interleaved PFC circuits, each interleaved PFC circuit includes one inductor, one pair of first switching components, and at least one capacitor, a first end of the inductor is connected to the alternating current power supply module, and a second end of the inductor is connected to one end of each capacitor through one of the first switching components and is also connected to the other end of each capacitor through the other one of the first switching components; and the control module samples a current of each first switching component in the power module, and turns off a first switching component through which a negative current flows.

Bridgeless power factor correction circuit and control method utilizing control module to control current flow in power module

A power factor correction converter and a control method thereof are provided includes an interleaving control tube set, an interface to an alternating current power supply, a first inductor, a second inductor, a third inductor, a capacitor, a first bridge arm and a second bridge arm. Abridge arm includes a first switch tube and a second switch tube connected in series; The first bridge arm, the second bridge arm, and the capacitor are connected to each other in parallel; the alternating current power supply and the first inductor are connected in series, and the second inductor and the third inductor are connected in parallel, and then connected to the first inductor in series; the second inductor is connected to the first bridge arm, and the second inductor is connected to the second bridge arm; and the alternating current power supply and the first inductor are connected in series.

Power factor correction converter and control method thereof

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Dongguan, China

Boning Huang