Stats Chippac Pte. Ltd.

BoHan Yoon

SungYoon Lee

JungHoon Shin

Sang-Ho Lee

WonJun Ko

Taewoo Lee

JoungUn Park

A semiconductor device includes a backing plate, a semiconductor wafer, and integrated devices. The semiconductor wafer includes a plurality of semiconductor die having edges oriented along a reference line, a front surface facing the backing plate, and a backside surface. The backside surface is formed opposite the front surface and includes linear grind marks oriented along the reference line and diagonal with respect to the edges of the plurality of semiconductor die. The linear grind marks are formed by a linear motion of an abrasive surface, such as by a cylinder or wheel having an abrasive surface, and in one embodiment are oriented at 45 degrees with respect to the reference line. The linear grind marks increase a strength of the plurality of semiconductor die to resist cracking. Integrated devices are formed on the front surface of the semiconductor wafer.

System and method for directional grinding on backside of a semiconductor wafer

An integrated circuit package in package system including: providing a substrate; mounting a wire bonded die with an active side over the substrate; connecting the active side to the substrate with bond wires; mounting a structure over the wire bonded die having a wire-in-film adhesive between the structure and the wire bonded die and overhangs at ends of the structure between the wire-in-film adhesive and the substrate; mounting support structures at the overhangs between the wire-in-film adhesive and the substrate; and encapsulating the wire bonded die and the structure with an encapsulation.

Integrated circuit package system with support structure under wire-in-film adhesive

A backside grinding apparatus removes semiconductor material from a surface of a semiconductor wafer. The wafer is mounted to a backing plate. The backside surface undergoes a first grinding operation in a rotational motion to remove excess semiconductor material. The semiconductor wafer is then aligned such that edges of the die are oriented along a reference line. The backside surface undergoes a second grinding operation in a linear direction on a 45-diagonal with respect to the reference line to create linear grind marks which are diagonal to the edges of the die. The linear grind marks are formed by an abrasive surface having at least 4000 mesh count. The second grinding operation removes the radial grind marks produced by the first grinding operation. The linear grind marks oriented diagonal with respect to the reference line increases the strength of the die to resist cracking.

Method for directional grinding on backside of a semiconductor wafer

An integrated circuit system including: providing an integrated circuit wafer having an integrated circuit side and a backside; mounting a protective adhesive on the integrated circuit side of the integrated circuit wafer; removing material from the backside of the integrated circuit wafer; and dicing the integrated circuit wafer through the protective adhesive to form an integrated circuit die.

Growing community of inventors

Pusan, South Korea

BoHan Yoon