Taiwan Semiconductor Manufacturing Comp. Ltd.

Blenny Chang

Gil Huang

Hsiu-Mei Yu

Chia-Jen Cheng

Li-Hsin Tseng

Sung-Cheng Chiu

Chien-Tung Yu

Huei-Mei Yu

Owen Chen

Jian-Wen Luo

Ken Sun

Chih Yang Chan

A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.

Method for forming solder bumps of increased height

A method of manufacturing a solder bump structure on a semiconductor device is provided. In one embodiment, a semiconductor substrate is provided having a bonding pad and a passivation layer formed thereabove, the passivation layer having an opening therein exposing a portion of the bonding pad. A first under bump metallization (UBM) layer is formed over the bonding pad and the passivation layer. A mask layer is placed over the first UBM layer, the mask layer having an opening therein exposing a portion of the first UBM layer. The mask layer is thereafter etched to create a recess at the edges between the first UBM layer and the mask layer. A second UBM layer is deposited in the opening of the mask layer, the second UBM layer filling the recess and a portion of the opening of the mask layer.

Method to reduce UBM undercut

Growing community of inventors

Kaohsiung Hsien, Taiwan

Blenny Chang