Versum Materials Us, LLC

Blake J Lew

Xiaobo Shi

Mark Leonard O'Neill

Matthias Stender

Laura M Matz

Ming-Shih Tsai

Agnes Derecskei-Kovacs

Agnes Derecskei

Rung-Je Yang

Chris Keh-Yeuan Li

Pao-Chia Pan

Chad Chang-Tse Hsieh

Mark Leonard O'neill

Pao Chia Pan

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Additives are used to reduce the dishing on large and small feature sizes (large bond pad as well as fine line structures) without retarding the tungsten removal rate.

Dishing reducing in tungsten chemical mechanical polishing

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Tempe, AZ, United States of America

Blake J Lew