Applied Materials, Inc.

Agency for Science, Technology and Research

Binni Varghese

Vibhu Jindal

Wen Xiao

Shiyu Liu

Azeddine Zerrade

Sanjay Krupakar Bhat

Jiang Feng Hu

Kiat Min Cher

Ramya Ramalingam

Jian Zhong Shi

Wen Huei Tsai

Chee Beng Lim

Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of increasing multilayer film reflectance are disclosed. The EUV mask blanks comprise a bilayer film on a substrate. The bilayer film comprises a first film layer including silicon (Si), and a second film layer comprising an element selected from the group consisting of ruthenium (Ru), nickel (Ni), cobalt (Co), tungsten (W), iron (Fe), titanium (Ti) and silicides thereof. Some EUV mask blanks further comprise a multilayer reflective stack comprising alternating layers on the bilayer film and a capping layer on the multilayer reflective stack. Some EUV mask blanks include a smoothing layer selected from the group consisting of molybdenum silicide (MoSi), boron carbide (BC) and silicon nitride (SiN) on the multilayer reflective stack, a capping layer on the smoothing layer, and an absorber layer on the capping layer.

Multilayer extreme ultraviolet reflector materials

Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

Extreme ultraviolet mask blank defect reduction methods

Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.

EUV mask blank absorber defect reduction

Various aspects of this disclosure provide a recording medium for heat-assisted-magnetic-recording (HAMR). The recording medium may include a substrate. The recording medium may further include a recording layer. The recording medium may also include a thermal control layer between the recording layer and the substrate. The thermal control layer may have a thermal conductivity that increases with increasing temperature.

Recording medium for heat assisted magnetic recording and method of forming the same

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Singapore, Singapore

Binni Varghese