Aixtron Ag

Aixtron, Inc.

Aixtron Se

Bernd Schulte

Gerhard Karl Strauch

Johannes Käppeler

Martin Dauelsberg

Johannes Kaeppeler

Gerd Strauch

Markus Reinhold

The invention relates to an apparatus for the deposition of one or more layers on a substrate (), which comprises a process chamber () which is arranged in a reactor housing () and has a heatable bottom () on which the substrate rests and a lid () extending parallel to the bottom () and also a gas inlet facility () for introduction of process gases. The distance (H) between the process chamber lid () and the process chamber bottom () can be reduced to virtually zero. A cooling apparatus () by means of which the process chamber lid () is cooled in the process position during deposition of the layers is provided above the process chamber lid (), with the distance between the cooling apparatus () and the process chamber lid () increasing as the distance (H) between the process chamber lid () and the process chamber bottom () is reduced.

CVD reactor having a process-chamber ceiling which can be lowered

The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.

Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned

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Aachen, Germany

Bernd Schulte