Texas Instruments Corporation

Benjamin Moser

Ajith Varghese

Lance Stanford Robertson

Narendra Singh Mehta

James David Bernstein

Said Ghneim

Nandu Mahalingam

A method of manufacturing a semiconductor device including calibrating an ion implant process. The calibration includes forming a dielectric layer over a calibration substrate. A dopant is implanted into the dielectric layer. Charge is deposited on a surface of the dielectric layer, and voltage on the surface is measured. An electrical characteristic of the dielectric layer is determined, and a doping level of the dielectric layer is determined from the electrical characteristic. The electrical characteristic is associated with an operating set-point of the ion implant process. The calibrated ion implant process is used to implant the dopant into a semiconductor substrate.

Semiconductor device manufactured using a non-contact implant metrology

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate () on an implant platen () such that a predominant axes () of the substrate () is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (), and further wherein the substrate () is not tilted. The method further includes implanting ions into the substrate (), the rotated position of the predominant axes () reducing shadowing.

Implant optimization scheme

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Chandler, AZ, United States of America

Benjamin Moser