American Air Liquide, Inc.

Air Liquide Electronics U.S. LP

Benjamin J Feist

Christian Dussarrat

Vincent M Omarjee

Olivier Letessier

Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one &#x3b2;-diketiminato ligand, and has the general formula:M(RC(NR)CRC(NR)R)Lwherein M is a metal selected from nickel, cobalt, ruthenium, iridium, palladium, platinum, silver and gold. Each of Ris an organic ligand independently selected from H; and a C-Clinear or branched, alky group, alkylsilyl group, alkylamide group, alkoxide group, or alkylsilylamide group. Each L is independently selected from: a hydrocarbon; an oxygen-containing hydrocarbon; an amine; a polyamine; a bipyridine; an oxygen containing heterocycle; a nitrogen containing heterocycle; and combinations thereof; and n is an integer ranging from 0 to 4, inclusive. A metal containing film is deposited onto the substrate, while the substrate is maintained at a temperature between about 100&#xb0; C. and about 500&#xb0; C.

Metal precursors containing beta-diketiminato ligands

Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Alkali earth metal precursors for depositing calcium and strontium containing films

Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.

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Wilmington, DE, United States of America

Benjamin J Feist