Applied Materials, Inc.

Benjamin C Wang

Avgerinos V Gelatos

Joshua Collins

Kai Wu

Amit Khandelwal

Srinivas Gandikota

Xinliang Lu

Yu Lei

Chien-Teh Kao

Sang Ho Yu

Xiaoxiong Yuan

Kazuya Daito

Benjamin Schmiege

Sang-Hyeob Lee

Gwo-Chuan Tzu

Michael Sterling Jackson

Michael P Karazim

Xuesong Lu

Olkan Cuvalci

Pingyan Lei

Rajkumar Jakkaraju

Chikuang Charles Wang

Kiejin Park

Yung-Hsin Lee

Jing Lin

Ghazal Saheli

Juno Yu-Ting Huang

Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

Deposition methods for uniform and conformal hybrid titanium oxide films

Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

Plasma treatment of film for impurity removal

A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Tungsten growth modulation by controlling surface composition

A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Methods and apparatus for thermal based substrate processing with variable temperature capability

Growing community of inventors

Santa Clara, CA, United States of America

Benjamin C Wang