Infineon Technologies Ag

Ben Heilmann

David Herbert

Torsten Partsch

George William Alexander

Embodiments of the invention generally provide methods and apparatuses for updating a temperature measurement. In one embodiment, the temperature measurement is performed by a temperature sensor using one or more reference signals. A signal to update the temperature measurement is received. A determination is made of whether the clocked standby mode signal has changed within a period of time prior to receiving the signal to update the temperature measurement. If the clocked standby mode signal has changed within the period of time, the signal to update the temperature sensor is masked. If the clocked standby mode signal has not changed within the period of time, the temperature measurement is updated using the signal to update the temperature measurement.

Temperature update masking to ensure correct measurement of temperature when references become unstable

A method and circuit for controlling an output reference voltage generated by a reference voltage generator disposed on a memory device are provided. A signal for enabling a clocked standby mode of the memory device is received. If the signal indicates that the memory device is in the clocked standby mode, a first reference voltage is generated as the output reference voltage of the reference voltage generator using a first voltage. If the signal indicates that the memory device is not in the clocked standby mode, a second reference voltage is generated as the output reference voltage of the reference voltage generator using a second voltage.

Maintaining internal voltages of an integrated circuit in response to a clocked standby mode

A method and apparatus for controlling a voltage generator of a memory device are provided. In one embodiment, a first clock signal and a second clock signal are provided. The voltage generator is selectively enabled in conjunction with the first clock signal when a period of the first clock signal is less than a period of the second clock signal and the voltage generator is selectively enabled in conjunction with the second clock signal when the period of the second clock signal is less than the period of the first clock signal.

Clocked standby mode with maximum clock frequency

A method and apparatus for controlling a voltage generator of a memory device are provided. A temperature of the memory device is measured. If the measured temperature is outside a threshold temperature range, the memory device is allowed to be placed in a clocked standby mode (CSM), whereby the voltage generator is selectively enabled with a clock signal. If the measured temperature is within a threshold temperature range, the memory device is prevented from being placed in the clocked standby mode (CSM).

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Raleigh, NC, United States of America

Ben Heilmann