Centre National De La Recherche Scientifique

Total Sa

Ecole Polytechnique

Centre National De La Recherche Scientifique-cnrs

Bastien Bruneau

Pere Roca I Cabarrocas

Erik Johnson

Jean-Paul Booth

Pavel Bulkin

Nada Habka

Gilles Poulain

Nacib Benmammar

Tatiana Novikova

An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.

Apparatus and method for patterned processing

A method for generating an ion flow asymmetry in a capacitively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.

Method and system for controlling ion flux in an RF plasma

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Paris, France

Bastien Bruneau