Basf Se Corporation

Basf Corporation

Basf Agro B.v.

St. Lawrence Nanotechnology

Basf Taiwan Ltd.

Basf Schweiz Ag

Bastian Marten Noller

Yuzhuo Li

Michael Lauter

Yongqing Lan

Reinhold Schwalm

Anja Simon

Alexander Kraus

Diana Franz

Jean-Francois Stumbe

Thomas Breiner

Christina Haaf

Arend Jouke Kingma

Volodymyr Boyko

Joachim Dengler

Christine Roesch

Daniel Kwo-Hung Shen

Kenneth Rushing

Yannick Fuchs

Robert Reichardt

Max Siebert

Reza M Golzarian

Sheik Ansar Usman Ibrahim

Kevin Huang

Joachim Von Seyerl

Christophe Gillot

Shyam Sundar Venkataraman

Zhenyu Bao

Kristine Hartnagel

Christian Sowa

Eason Yu-Shen Su

Roland Lange

Roland Böhn

Alexandra Muench

Manuel Six

Gerald Daniel

Liang Jiang

Bettina Drescher

Albert Budiman Sugiharto

Nina Susanne Hilesheim

Ning Gao

The present invention relates to microparticle compositions comprising saflufenacil, to a method of their preparation and to the use of these microparticle compositions for controlling undesired vegetation. In the microparticle compositions saflufenacil is present in the form of microparticles, which comprise solid saflufenacil, which is surrounded or embedded by an aminoplast polymer.

Microparticle compositions comprising saflufenacil

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (&#x2014;COOR), sulfonate (&#x2014;SOR), sulfate (&#x2014;O&#x2014;SOR), phosphonate (&#x2014;P(&#x2550;O)(OR)(OR)), phosphate (&#x2014;O&#x2014;P(&#x2550;O)(OR)(OR)), carboxylic acid (&#x2014;COOH), sulfonic acid (&#x2014;SOH), sulfuric acid (&#x2014;O&#x2014;SO&#x2014;), phosphonic acid (&#x2014;P(&#x2550;O)(OH)), phosphoric acid (&#x2014;O&#x2014;P(&#x2550;O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine

Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6. 

Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium

Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a protein

An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)/(B2)Y](I), wherein the indices and the variables have the following meaning: m, n, and p integers&#x2267;1; R hydrogen atom or monovalent or polyvalent organic residue, except C-Calkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C-Calkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGematerial with 0.1&#x2266;x&#x3c;1 in the presence of a chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, (C) at least one type of an organic compound which comprises at least {k} moieties (Z), but excluding salts whose anions are inorganic and whose only organic cation is [NRRRR], wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (&#x2014;OH), alkoxy (&#x2014;OR), heterocyclic alkoxy (&#x2014;ORas part of a heterocyclic structure), carboxylic acid (&#x2014;COOH), carboxylate (&#x2014;COOR), amino (&#x2014;NRR), heterocyclic amino (&#x2014;NRRas part of a heterocyclic structure), imino (&#x2550;N&#x2014;Ror &#x2014;N&#x2550;R), heterocyclic imino (&#x2550;N&#x2014;Ror &#x2014;N&#x2550;Ras part of a heterocyclic structure), phosphonate (&#x2014;P(=0)(OR)(OR)), phosphate (-0-P(=0)(OR)(OR)), phosphonic acid (&#x2014;P(=0)(OH)), phosphoric acid (-0-P(=0)(OH)) moiety, or their protonated or deprotonated forms, R, R, R, Ris&#x2014;independently from each other&#x2014;alkyl, aryl, alkylaryl, or arylalkyl, R, R, R, R, Ris&#x2014;independently from each other&#x2014;H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkylene, or arylalkylene, R, R, Ris&#x2014;independently from each other&#x2014;H, alkyl, aryl, alkylaryl, or arylalkyl, and R, R, Rdoes not comprise any moiety (Z), Ris alkyl, aryl, alkylaryl, or arylalkyl, and Rdoes not comprise any moiety (Z), and (D) an aqueous medium.

[object Object]

A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant

A chemical-mechanical polishing ('CMP') composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors

The present invention relates to silylated amino resins, to processes for preparing them, to their use, and to coating compositions comprising them.

Silylated amino resins

Growing community of inventors

Lorsch, Germany

Bastian Marten Noller