Aixtron Se

Baskar Pagadala Gopi

Martin Dauelsberg

Michael Long

Markus Gersdorff

Thomas Krücken

Nico Meyer

Roger Abdel-Karim

Patrick Marie Antonius Backes

A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Temperature-controlled gas supply line with dilution gas flows supplied at multiple locations

A device for carrying out a CVD process comprises a gas inlet element, which is arranged in a reactor housing and has a gas outlet plate, which faces a process chamber, comprises a porous material and has a multiplicity of gas outlet openings, which are fed with process gases from a gas distributing volume arranged in the gas inlet element. In order to improve production aspects of a gas inlet element, in particular for a CVD reactor with a large coating area, it is proposed that the porous material forms the core of the gas outlet plate, the surface segments of which that come into contact with the process gas are sealed.

Gas inlet element of a CVD reactor with weight-reduced gas outlet plate

A gas distributor for a CVD reactor includes two separate gas distribution chambers, into each of which a process gas can be fed through an infeed opening. Each of the gas distribution chambers is formed, in part, by a gas distribution device disposed in a top layer being in each case flow-connected to connecting channels disposed in a bottom layer. The connecting channels associated with different gas distribution chambers lie alternately adjacent to one another and have gas outlet openings for the process gases to escape. Each of the at least two gas distribution devices has a distribution section, which in each case is flow-connected to a plurality of sub-distribution sections. The connecting channels are flow-connected to at least one of the sub-distribution sections. The sub-distribution sections of different gas distribution chambers lie alternately adjacent to one another and are separated from one another by a dividing wall.

Gas distributor for a CVD reactor

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Aachen, Germany

Baskar Pagadala Gopi