Kla Tencor Corporation

Kla-tencor Technologies Corporation

Kla Instruments Corporation

Barry Becker

Hong Chen

Michael John Van Riet

Chien-Huei (Adam) Chen

Chris Maher

Stephanie Chen

Suryanarayana Tummala

David J Clark

Lee H Veneklasen

Alan D Brodie

Jason Z Lin

Subramanian Balakrishnan

Chung-Shih Pan

Yong Zhang

Curt H Chadwick

John S Taylor

John D Greene

Eric Munro

Richard R Simmons

Ralph T Johnson

Chetana Bhaskar

Dan Meisburger

Anil A Desai

Michal Kowalski

Timothy L Hutcheson

Jack Y Jau

John McMurtry

April Dutta

Paul Wieczorek

Kirkwood Rough

Dennis G Emge

Henry Pearce-Percy

Mike Robinson

David E Smith

Dean Walters

Sam Wong

Surendra Lele

Chun C Lin

Hoi T Nguyen

Yen-Jen Oyang

Chris Kirk

Ming-Yie Ling

Hans Dohse

Ray Paul

Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe are provided. One method includes separating defects into bins based on regions in which the defects are located, defect types, and values of the defects for parameter(s) of a detection algorithm. The method also includes determining a number of the defects to be selected from each bin by distributing a user-specified target number of defects across the bins. In addition, the method includes selecting defects from the bins based on the determined numbers thereby creating a defect sample for use in selecting values of parameter(s) of the detection algorithm for use in the inspection recipe.

Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe

Methods and systems for generating information to be used for selecting values for parameter(s) of a detection algorithm are provided. One method includes without user intervention performing a scan of an area of a wafer using an inspection system and default values for parameter(s) of a detection algorithm to detect defects on the wafer. The method also includes selecting a portion of the defects from results of the scan based on a predetermined maximum number of total defects to be used for selecting values for the parameter(s) of the detection algorithm. The method further includes storing information, which includes values for the parameter(s) of the detection algorithm determined for the defects in the portion. The information can be used to select the values for the parameter(s) of the detection algorithm to be used for the inspection recipe without performing an additional scan of the wafer subsequent to the scan.

Methods and systems for generating information to be used for selecting values for one or more parameters of a detection algorithm

There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means. To function most efficiently there is also a vacuum means for evacuating and repressurizing a chamber containing the substrate. The vacuum means can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum means can simultaneously evacuate a plurality of substrates prior to inspection and repressurize of the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison means for comparing the pattern on the substrate with a second pattern.

Electron beam inspection system and method

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San Jose, CA, United States of America

Barry Becker