Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Dow Global Technolgoies LLC

Nitta Haas Inc.

Other

Dupont Electronics, Inc.

Bainian Qian

Marty W DeGroot

George C Jacob

Fengji Yeh

Julia Kozhukh

Teresa Brugarolas Brufau

Jeffrey James Hendron

Andrew Wank

James T Murnane

David B James

Jeffrey Borcherdt Miller

Diego Lugo

Yuhua Tong

Michelle K Jensen

John Gifford Nowland

David Michael Veneziale

Tony Quan Tran

Marc R Stack

Kancharla-Arun Kumar Reddy

Michael E Mills

Robert M Blomquist

Bradley K Taylor

Donna Marie Alden

Angus Repper

Sheng-Huan Tseng

Lyla M El-Sayed

Shijing Xia

Yi Guo

Mark F Sonnenschein

Ethan S Simon

Rui Xie

Joseph K So

Hiroyuki Nakano

Matthew Richard Van Hanehem

Mohammad T Islam

Nan-Rong Chiou

David Shidner

Koichi Yoshida

Katsumasa Kawabata

Thomas P Willumstad

Darrell String

Raymond L Lavoie, Jr

Yasuyuki Itai

Kazutaka Miyamoto

Naoko Kawai

Jonathan G Weis

Benson Lee

Kun-Ming Tsai

Janet Tesfai

Te-Chun Wang

Kevin Wen-Huan Tung

Kenjiro Ogata

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Chemical mechanical polishing pad

A polishing pad for chemical mechanical polishing comprises a polishing layer that comprises a polymer matrix that is the reaction product of an isocyanate terminated prepolymer with a curative, wherein the polymer matrix has hard segments and soft segments wherein multi-lobed polymeric elements formed from pre-expanded polymeric microspheres are present in the polymer matrix. The polishing pad can be made by preparing a pre-blend of the isocyanate terminated prepolymer and the pre-expanded fluid filled polymeric microspheres in a stirred tank; pumping a portion of the pre-blend from a bottom of the stirred tank through a conduit and recycling to a top region of the stirred tank, mixing a portion of the pre-blend with the curative to form a mixture, casting the mixture in a mold, curing the mixture in the mold.

Chemical mechanical planarization pad having polishing layer with multi-lobed embedded features

The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is a photopolymerizable composition containing a block copolymer, a UV curable acrylate, and a photoinitiator.

Chemical mechanical polishing pad and preparation thereof

The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is prepared by extruding a compounded photopolymerizable composition followed by exposure to UV light.

The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Methods of making chemical mechanical polishing layers having improved uniformity

The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160&#xb0; C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80&#xb0; C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm.

High removal rate chemical mechanical polishing pads and methods of making

The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.

Chemical mechanical polishing pads having offset circumferential grooves for improved removal rate and polishing uniformity

A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80&#xb0; C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.

High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives

The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4'-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4&#x2032;-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G&#x2032;) at 65&#xb0; C. of from 125 to 500 MPa, and a damping component (G&#x2033;/G&#x2032; measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50&#xb0; C. of from 0.06 to 0.13.

Chemical mechanical polishing pads for improved removal rate and planarization

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Method of making polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Method of making composite polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Growing community of inventors

Newark, DE, United States of America

Bainian Qian