Asm Japan K.k.

Baiei Kawano

Akira Shimizu

Hideaki Fukuda

Hiroshi Shinriki

Takayuki Yamagishi

Shingo Ikeda

Yoshinori Morisada

Hiroki Arai

Kazuo Sato

Yasuhiro Tobe

A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms

A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.

Dual-chamber plasma processing apparatus

A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

Semiconductor-processing apparatus provided with susceptor and placing block

A thin-film deposition apparatus includes a reaction chamber, a substrate transfer chamber, a susceptor having a radially-extending step portion, a ring-shaped separation wall for separating the reaction chamber and the substrate transfer chamber at a processing position where the susceptor is positioned inside the ring-shaped separation wall, and a conductive sealing member which is interposed between the radially-extending step portion and the separation wall to seal the reaction chamber from the substrate transfer chamber when the susceptor is at a processing position.

Thin-film deposition apparatus

A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.

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Tama, Japan

Baiei Kawano