Other

Xintec Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Bai-Yao Lou

Chien-Hung Liu

Chia-Ming Cheng

Tsang-Yu Liu

Shu-Ming Chang

Chia-Sheng Lin

Ying-Nan Wen

Chuan-Jin Shiu

Hsin-Chih Chiu

Ho-Yin Yiu

Wei-Chung Yang

Shih-Kuang Chen

Tzu-Hsiang Hung

Wen-Chih Chiou

Shang-Yun Hou

Ching-Wen Hsiao

Han-Ping Pu

Chen-Cheng Kuo

Yen-Shih Ho

Wei-Ming Chen

Chia-Lun Tsai

Kai-Ming Ching

Wen-Cheng Chien

Ching-Yu Ni

Long-Sheng Yeou

Jiun-Yen Lai

Shih-Yi Lee

Dean Wang

Hung-Jen Lee

Hsin Kuan

Tien-Hao Huang

Nan-Chun Lin

Ding-Chung Lu

Yu-Wen Hu

Chih-Hao Chen

Sheng-Yuan Lee

A manufacturing method of a passive component structure includes the following steps. A protection layer is formed on a substrate, and bond pads of the substrate are respectively exposed through protection layer openings. A conductive layer is formed on the bond pads and the protection layer. A patterned photoresist layer is formed on the conductive layer, and the conductive layer adjacent to the protection layer openings is exposed through photoresist layer openings. Copper bumps are respectively electroplated on the conductive layer. The photoresist layer and the conductive layer not covered by the copper bumps are removed. A passivation layer is formed on the copper bumps and the protection layer, and at least one of the copper bumps is exposed through a passivation layer opening. A diffusion barrier layer and an oxidation barrier layer are chemically plated in sequence on the copper bump.

Passive component structure and manufacturing method thereof

An embodiment of the invention provides a chip package which includes: a semiconductor substrate; a device region formed in the semiconductor substrate; at least a conducting pad disposed over a surface of the semiconductor substrate; a protection plate disposed over the surface of the semiconductor substrate; and a spacer layer disposed between the surface of the semiconductor substrate and the protection plate, wherein the protection plate and the spacer layer surround a cavity over the device region, the spacer layer has an outer side surface away from the cavity, and the outer side surface of the spacer layer is not a cutting surface.

Chip package and method for forming the same

An embodiment of the invention provides a chip package which includes a substrate having a first surface and a second surface; a conducting pad structure located on the first surface; a dielectric layer located on the first surface of the substrate and the conducting pad structure, wherein the dielectric layer has an opening exposing a portion of the conducting pad structure; and a cap layer located on the dielectric layer and filled into the opening.

A power module includes a substrate; a conductive path layer formed on the substrate with a specific pattern as an inductor; a connection layer being formed on the substrate and electrically connected to a first terminal of the inductor; and a first transistor, electrically mounted on the substrate through the connection layer.

Power module and the method of packaging the same

A wafer packaging method includes the following steps. A light transmissive carrier is provided. A hydrolytic temporary bonding layer is formed on the light transmissive carrier. A first surface of a light transmissive protection sheet is bonded to the hydrolytic temporary bonding layer, such that the hydrolytic temporary bonding layer is located between the light transmissive protection sheet and the light transmissive carrier. A second surface of the light transmissive protection sheet facing away from the first surface is bonded to a third surface of a wafer. The light transmissive carrier, the hydrolytic temporary bonding layer, the light transmissive protection sheet, and the wafer are immersed in a high temperature liquid, such that adhesion force of the hydrolytic temporary bonding layer is eliminated. The light transmissive protection sheet and the wafer are obtained from the high temperature liquid.

Wafer packaging method

Embodiments of the present invention provide a capacitive coupler packaging structure including a substrate with at least one capacitor and a receiver formed thereon, wherein the at least one capacitor at least includes a first electrode layer, a second electrode layer and a capacitor dielectric layer therebetween, and the first electrode layer is electrically connected to the receiver via a solder ball. The capacitive coupler packaging structure also includes a transmitter electrically connecting to the capacitor.

Capacitive coupler packaging structure

An electronic device package is disclosed. The package includes at least one semiconductor chip having a first surface and a second surface opposite thereto, in which at least one redistribution layer is disposed on the first surface of the semiconductor chip and is electrically connected to at least one conductive pad structure. At least one abut portion is disposed on the redistribution layer and electrically contacting thereto. A passivation layer covers the first surface of the semiconductor chip and surrounds the abut portion. A substrate is attached onto the second surface of the semiconductor chip. A fabrication method of the electronic device package is also disclosed.

Electronic device package and fabrication method thereof

An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer located on the second surface of the substrate, wherein the protection layer has an opening; a light shielding layer located on the second surface of the substrate, wherein a portion of the light shielding layer extends into the opening of the protection layer; a conducting bump disposed on the second surface of the substrate and filled in the opening of the protection layer; and a conducting layer located between the substrate and the protection layer, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump.

Chip package

The invention provides an electronic device package and a method for fabricating the same. The electronic device package includes a carrier wafer. An electronic device chip with a plurality of conductive pads thereon is disposed over the carrier wafer. An isolation laminating layer includes a lower first isolation layer, which covers the carrier wafer and the electronic device chip, and an upper second isolation layer. The isolation laminating layer has a plurality of openings to expose the conductive pads. A plurality of redistribution patterns is conformably formed on the isolation laminating layer and in the openings. The redistribution patterns are electrically connected to the conductive pads, respectively. A plurality of conductive bumps is respectively formed on the redistribution patterns, electrically connected to the conductive pads.

Electronic device package and method for fabricating the same

An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first surface; and a light shielding layer disposed on the second surface and having a second alignment mark, wherein the second alignment mark corresponds to the first alignment mark.

A chip package includes: a substrate having a first and a second surfaces; an optical device on the first surface; a conducting layer on the second surface; a passivation layer on the second surface and the conducting layer, wherein the passivation layer has an opening exposing the conducting layer; a conducting bump on the second surface and having a bottom and an upper portions, wherein the bottom portion is disposed in the opening and electrically contacts the conducting layer, and the upper portion is located outside of the opening and extends along a direction away from the opening; a recess extending from a surface of the conducting bump toward an inner portion of the conducting bump; and a light shielding layer on the second surface, extending under the upper portion, and partially located in the recess and overlapping a portion of the conducting bump.

An embodiment of the invention provides a chip package, which includes a substrate having an upper surface and a lower surface, a chip disposed in or on the substrate, a pad disposed in or on the substrate and electrically connected to the chip, a hole extending from the lower surface toward the upper surface, exposing the pad, wherein a lower opening of the hole near the lower surface has a width that is shorter than that of an upper opening of the hole near the upper surface, an insulating layer located overlying a sidewall of the hole, and a conducting layer located overlying the insulating layer and electrically connected to the pad.

Chip package and method for fabricating the same

A method for packaging a semiconductor device disclosed. A substrate comprising a plurality of dies, separated by scribe line areas respectively is provided, wherein at least one layer is overlying the substrate. A portion of the layer within the scribe lines area is removed by photolithography and etching to form openings. The substrate is sawed along the scribe line areas, passing the openings. In alternative embodiment, a first substrate comprising a plurality of first dies separated by first scribe line areas respectively is provided, wherein at least one first structural layer is overlying the first substrate. The first structural layer is patterned to form first openings within the first scribe line areas. A second substrate comprising a plurality of second dies separated by second scribe line areas respectively is provided, wherein at least one second structural layer is overlying the substrate. The second structural layer is patterned to form second openings within the second scribe line areas. The first substrate and the second substrate are bonded to form a stack structure. The stack structure is cut along the first and second scribe line areas, passing the first and second openings.

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Hsinchu, Taiwan

Bai-Yao Lou