Kabushiki Kaisha Toshiba

Ayako Maeda

Mokuji Kageyama

Masanobu Ogino

Moriya Miyashita

Shintaro Yoshii

An object to be measured is moved relative to a stick prepared by cooling and solidifying a solution into a rod-like shape. The stick is brought into contact with the surface of the object to be measured, thereby dissolving a natural oxide film and the like formed on the surface of the object. After the stick is brought into contact with the overall surface of the object to be measured, the solution held at the end portion of the stick is analyzed by chemical analysis to measure the type and amount of an impurity adhered on the surface of the object.

Method of measuring impurities in oxide films using a meltable sample

A drop which is hydrophobic to the surface of an object to be measured is dropped on the surface of the object and moved so as to be brought into contact with the overall surface of the object to be measured. After the movement, the drop is recovered and analyzed by chemical analysis to measure the kind of element and content of an impurity adsorbed on the surface of the object to be measured.

Impurity measuring method

An ultrasonic wave is propagated to the surface of a semiconductor wafer in pure water to effect the gettering treatment with respect to the surface of the semiconductor wafer. Mechanical damages are formed on the surface of the semiconductor wafer to which the ultrasonic wave is applied, and at the same time the surface of the semiconductor wafer is cleaned. The mechanical damages serve to function as back side damage.

Growing community of inventors

Kawasaki, Japan

Ayako Maeda