Average Co-Inventor Count = 2.80
ph-index = 6
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Advanced Micro Devices Corporation (20 from 12,883 patents)
2. Globalfoundries Inc. (8 from 5,671 patents)
3. Amd Inc. (1 from 10 patents)
29 patents:
1. 9620453 - Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof
2. 9305878 - Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects
3. 8951900 - Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces
4. 8932911 - Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects
5. 8883610 - Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines
6. 8450197 - Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces
7. 8389401 - Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
8. 8314494 - Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices
9. 8153524 - Providing superior electromigration performance and reducing deterioration of sensitive low-k dielectrics in metallization systems of semiconductor devices
10. 7985329 - Technique for electrochemically depositing an alloy having a chemical order
11. 7981793 - Method of forming a metal directly on a conductive barrier layer by electrochemical deposition using an oxygen-depleted ambient
12. 7947158 - Apparatus and method for removing bubbles from a process liquid
13. 7781329 - Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices
14. 7745327 - Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime
15. 7615103 - Apparatus and method for removing bubbles from a process liquid