Applied Materials Israel Limited

Applied Materials, Inc.

Aviram Tam

Ovadya Menadeva

Zvika Rosenberg

Lei Zhong

Yaron Cohen

Michael Ben-Yishai

Liraz Gershtein

Colin David Chase

Kris Roman

Gidi Gottlib

An analysis system that includes a processor and an memory module; wherein the memory module is arranged to store aerial images of an area of a mask, each aerial image corresponds to focus value out of a set of different focus values; wherein the processor is arranged to find weak points by processing the aerial images using different printability thresholds; and wherein the processor is arranged to determine focus and exposure values for generating a Process Window Qualification (PWQ) wafer to be manufactured using the mask in response to focus and exposure values associated with the weak points.

Aerial mask inspection based weak point analysis

An inspection system, and a computer program product that stores instructions for: obtaining an aerial image of an area of the mask; wherein the aerial image represents an expected image to be formed on a photoresist of an object during a lithography process that involves illuminating the area of the mask, by a lithography tool; wherein the photoresist has a printability threshold; wherein the lithography process exhibits a process window that introduces allowable changes at pixels of the expected image that do not exceed an intensity threshold; and searching for at least one weak point at the area of the mask, which is either a local extremum point of the aerial image spaced apart from the printability threshold by a distance that does not exceed the intensity threshold or a crossing point of the printability threshold and being of a slope that is below a predefined threshold.

Detection of weak points of a mask

A method for evaluating a feature. The method includes receiving an image of the feature and determining respective coordinates of a plurality of points on an edge of the feature in the image. A figure having a non-circular and non-linear shape is fitted to the plurality of points, and respective distances between the plurality of points and the figure are determined. A roughness parameter for the feature is computed using the respective distances. The method may be applied in the analysis of critical dimensions (CD) of integrated circuits and, particularly, in the measurement of the edge roughness of their features and components as imaged using electron scanning microscopy (SEM).

Advanced roughness metrology

The invention provides a method and a measurement system. The method includes: providing a measurement model that includes measurement image information; locating a measurement area image area by utilizing the measurement image information; and performing at least one measurement to provide measurement result information.

Measurement system and a method

A system and method for determining a cross sectional feature of a measured structural element having a sub-micron cross section, the cross section is defined by an intermediate section that is located between a first and a second traverse sections. The method starts by a first step of scanning, at a first tilt state, a first portion of a reference structural element and at least the first traverse section of the measured structural element, to determine a first relationship between the reference structural element and the first traverse section. The first step is followed by a second step of scanning, at a second tilt state, a second portion of a reference structural element and at least the second traverse section of the measured structural element, to determine a second relationship between the reference structural element and the second traverse section. The method ends by a third step of determining a cross sectional feature of the measured structural element in response to the first and second relationships.

System and method for determining a cross sectional feature of a structural element using a reference structural element

A method for analyzing an image includes identifying a curved segment of a contour that is associated with noise. The curved segment is smoothed so as to reduce the noise that is associated with the curved segment, thereby providing a smoothed segment. The smoothed segment is transformed to a natural coordinate system, thereby providing a transformed segment. A line is fitted to the transformed segment in order to determine a radius of curvature of the curved segment.

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Nes Ziona, Israel

Aviram Tam