Applied Materials, Inc.

Avinash Ishwar Shervegar

John C Forster

Anantha K Subramani

Zhiyuan Ye

Kallol Bera

Tsutomu Tanaka

Dmitry A Dzilno

Zhepeng Cong

Jozef Kudela

Ala Moradian

Alexander Viktorovich Garachtchenko

Xiaopu Li

Enle Choo

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

In-situ epi growth rate control of crystal thickness micro-balancing sensor

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool

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San Jose, CA, United States of America

Avinash Ishwar Shervegar