Fei Comapny

Aurelien Philippe Jean Maclou Botman

Steven J Randolph

Milos Toth

Gregory A Schwind

Sean Kellogg

Luigi Mele

Jorge Filevich

David H Narum

Leon Van Kouwen

Clive D Chandler

Mark Utlaut

N William Parker

Marcus Straw

Cameron James Zachreson

Dolf Timmerman

Daniel Totonjian

Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an analytical method comprises: directing and focusing a beam of ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and detecting and measuring X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.

Particle-induced x-ray emission (PIXE) using hydrogen and multi-species focused ion beams

A method and system are disclosed for observing and aligning a beam of light in the sample chamber of a charged particle beam (CPB) system, such as an electron microscope or focused ion beam system. The method comprises providing an imaging aid inside the sample chamber with a calibration surface configured such that when illuminated by light, and simultaneously illuminated by a CPB, the intensity of the secondary radiation induced by the CPB is different in regions also illuminated by light relative to regions with lower light illumination levels, thereby providing an image of the light beam on the calibration surface. The image of the light beam may be used to align the light beam to the charged particle beam.

Method for alignment of a light beam to a charged particle beam

A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.

Adaptive beam current for high throughput patterning

A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

Collision ionization source

A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.

Method of modifying a sample surface layer from a microscopic sample

A collision ionization ion source comprising:

Collision ionization ion source

A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Localized, in-vacuum modification of small structures

A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column. The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.

Integrated light optics and gas delivery in a charged particle lens

A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or microelectromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.

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Portland, OR, United States of America

Aurelien Philippe Jean Maclou Botman