Tokyo Electron Limited

Audunn Ludviksson

Lee Chen

Eric J Strang

Tadahiro Ishizaka

Joseph T Hillman

Andrej Mitrovic

Steven T Fink

A method and apparatus for dry etching pure Cu and Cu-containing layers for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy to oxidize the Cu and Cu-containing layers, and organic compound etching reagents that react with the oxidized Cu to form volatile Cu-containing etch products. The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist.

Neutral beam etching of Cu-containing layers in an organic compound gas environment

A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.

Post deposition plasma cleaning system and method

A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer.

Method and system for etching high-k dielectric materials

A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical system has a window and is constructed and arranged to detect a plasma process condition through the window and a transmission condition of the window. The method includes detecting an optical emission from the plasma processing region and monitoring contamination of a window provided by the optical system.

Apparatus and method for use of optical system with a plasma processing system

A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.

Plasma etching of Cu-containing layers

A method and apparatus for real-time monitoring of a gaseous environment during a semiconductor process. The method utilizes metastable electronic energy transfer to excite and ionize the chamber gaseous effluent and correlates the fluorescence signals from the excited species and mass spectroscopy analysis of the ions generated with the process status. In addition to the ability to produce excited species that fluoresce, the method has the ability to generate molecular ions from labile compounds, reduce fragmentation and operate at higher pressures than conventional ionization methods.

Method and apparatus for process monitoring and control

A method and apparatus for dry etching pure Cu and Cu-containing layers () for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy () to oxidize the Cu and Cu-containing layers, and etching reagents () that react with the oxidized Cu () to form volatile Cu-containing etch products (). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist ().

Anisotropic dry etching of Cu-containing layers

A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and characterization of adsorbed chemical species on a substrate. The process monitoring can be applied to endpoint- and fault detection in etching and deposition processes, in addition to chamber cleaning and chamber condition steps.

Process monitoring using infrared optical diagnostics

A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain a gas emitter that can release a sensor gas into a plasma process environment. The sensor gas can produce characteristic fluorescent light emission when exposed to a plasma. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission and a mass signal from the sensor gas. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Method of using a sensor gas to determine erosion level of consumable system components

A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Monitoring erosion of system components by optical emission

A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Monitoring material buildup on system components by optical emission

Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method includes depositing tantalum silicide by TCVD from the reaction of a TaF or TaCl precursor vapor with silane gas on a 250&deg; C.-450&deg; C. heated substrate, then exposing the tantalum silicide to a thermal NH treatment or an NH &mdash; or N -containing plasma treatment.

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Scottsdale, AZ, United States of America

Audunn Ludviksson