Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi Medical Corporation

Hitachi-science Systems, Ltd.

Atsushi Takane

Mitsugu Sato

Hideo Todokoro

Mitsuji Ikeda

Satoru Yamaguchi

Shoji Yoshida

Tadashi Otaka

Takashi Iizumi

Haruo Yoda

Makoto Ezumi

Yasuhiko Ozawa

Fumio Mizuno

Hiromi Inada

Kazutaka Nimura

Tohru Ishitani

Shigeto Isakozawa

Yoshihiko Nakayama

Katsuhiko Sakai

Hideaki Koizumi

Munetaka Tsuda

Satoshi Yamaguchi

Koichi Sano

Hiroyuki Tanaka

Osamu Komuro

Tatsuya Maeda

Masato Kazui

Shun-ichi Watanabe

Yasutaka Toyoda

Toshihide Agemura

Sukehiro Ito

Yoshiyuki Miyamoto

Junichi Katane

Ryuzaburo Takeda

Shinichi Tomita

Atsushi Kobaru

Shunya Watanabe

Masao Yabusaki

Takeshi Ogashiwa

Akinari Morikawa

Yuji Inoue

Chisato Kamiya

Shuichi Takeuchi

Mine Nakagawa

Hiroshi Kikuchi

Nobuhiro Obara

Mine Araki

Koji Kawaki

Yuusuke Narita

Takeharu Shichiji

Atsushi Miyaki

Toru Ishitani

To provide a defect inspection apparatus and method adapted to easily assign threshold levels to scattered-light detectors and to appropriately acquire data detected by each scattered-light detector. The apparatus includes a stage device on which to rest a sample; a laser light irradiation device that irradiates the sample on the stage device with inspection light; scattered-light detectors, each of which detects a beam of light, scattered from the sample, and outputs an image signal; a threshold level setter formed so that an associated threshold level for judging whether defects are present is set only for an image signal selected from individual image signals of the scattered-light detectors or from image signals obtained by arithmetic processing based on the image signals, and a threshold level setting circuit that acquires the individual image signals, only if the image signal exceeds the threshold level set in the threshold level setter.

Defect inspection apparatus and method utilizing multiple inspection conditions

In a method and apparatus for removing artifacts from an image generated a charged partial beam scanning device, a scanning method is determined, and the frequency of an artifact appearing on an image can then be determined, based on scanning method. A step, a frequency domain for removing an artifact can be determined from the vertical and horizontal widths determined by experimentation in advance with respect to the frequency position Photography is performed to obtain an image, which is Fourier transformed and the determined frequency domain is replaced, for example, by '0.' The resulting image is subjected to inverse Fourier transformation, and displayed and stored. The flow of such processing enables decreasing an artifact appearing on an image, depending on a scanning method. The frequency domain (vertical and horizontal widths) that is to be eliminated and a method for replacement by '0' are determined in advance, depending on the kind of inspected samples and a method can be selected depending on the kind of samples.

Charged particle beam apparatus

On the basis of a displacement of the field of view before and after a deflection of a charged particle beam, extracted from a first specimen image, including a displacement of the field of view recorded by causing a charged particle beam to deflect by a predetermined amount by a beam deflector in an image in which a specimen image is captured at a first magnification calibrated by using a specimen enlarged image of a specimen as a magnification standard, and also a displacement of the field of view before and after a deflection of the charged particle beam, extracted from a second specimen image, including a displacement of the field of view recorded by causing a charged particle beam to deflect by the predetermined amount by the beam deflector in an image in which a specimen image is captured at a second magnification, the second magnification is calibrated.

Charged particle beam equipment and charged particle microscopy

A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.

A pattern matching apparatus comprising: means for storing photographed image data of a semiconductor device; means for storing CAD data of said semiconductor device; an information input means for inputting information on the white band width contained in said image data; a pattern extracting means for extracting a pattern on the semiconductor device from said image data by using the white band width information; and a matching means for matching said pattern with the CAD data.

Pattern matching apparatus and scanning electron microscope using the same

There is provided a charged particle beam apparatus which allows implementation of a high-reliability and high-accuracy dimension measurement even if height differences exist on the surface of a sample. The charged particle beam apparatus includes the following configuration components: An acquisition unit for acquiring a plurality of SEM images whose focus widths are varied in correspondence with the focal depths, a determination unit for determining, from the plurality of SEM images acquired, a SEM image for which the image sharpness degree of the partial domain including a dimension-measuring domain becomes the maximum value, and a measurement unit for measuring the dimension of the predetermined domain from the SEM image whose image sharpness degree is the maximum value.

Charged particle beam apparatus and dimension measuring method

A charged particle beam apparatus facilitating adjusting a beam center axis of a charged particle beam in a case where optical conditions are modified or in a case where the beam center axis of the charged particle beam is moved due to state variation of the apparatus. When the beam center axis of a primary charged particle beam is adjusted with a deflector (aligner), a first processing step for measuring the sensitivity of the aligner and a second processing step for detecting the deviation between the center of the primary charged particle beam and the center of the objective aperture are provided. The charged particle beam apparatus determines the aligner set values, using the aligner sensitivity measured in the first processing step and the amount of deviation detected in the second processing step, such that the primary charged particle beam passes through the center of the objective aperture and controls the aligner using the aligner set values.

Charged particle beam apparatus and method for charged particle beam adjustment

Charged particle beam equipment has a processing unit for calibrating dimension values of an enlarged specimen image, and means for changing the amount by which a charged particle beam is scanned. Also, a specimen stand has a mechanism for holding a specimen having a periodical structure or a specimen simultaneously having a periodical structure and a non-periodical structure, and a storage device for automatically changing a magnification for an enlarged specimen image, and storing measured values at all magnifications.

Charged particle beam equipment

Image evaluation method capable of objectively evaluating the image resolution of a microscope image. An image resolution method is characterized in that resolution in partial regions of an image is obtained over an entire area of the image or a portion of the image, averaging is performed over the entire area of the image or the portion of the image, and the averaged value is established as the resolution evaluation value of the entire area of the image or the portion of the image. This method eliminates the subjective impressions of the evaluator from evaluation of microscope image resolution, so image resolution evaluation values of high accuracy and good repeatability can be obtained.

Image evaluation method and microscope

An object of the present invention is to provide a sample image forming method and a charged particle beam apparatus which are suitable for realizing suppressing of the view area displacement with high accuracy while the influence of charging due to irradiation of the charged particle beam is being suppressed. In order to attain the above object, the present invention provide a method of forming a sample image by scanning a charged particle beam on a sample and forming an image based on secondary signals emitted from the sample, the method comprising the steps of forming a plurality of composite images by superposing a plurality of images obtained by a plurality of scanning times; and forming a further composite image by correcting positional displacements among the plurality of composite images and superposing the plurality of composite images, and a charged particle beam apparatus for realizing the above method.

Method of forming a sample image and charged particle beam apparatus

It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

A charged particle beam apparatus is provided which can prevent the accuracy of positional shift detection from being degraded owing to differences in picture quality, so that even when the state of a charged particle beam is changed at the time that optical conditions are changed or the optical axis changes with time, an auto adjustment of the optical axis can be realized easily and highly accurately. In the charged particle beam apparatus, evaluation or adjustment of focusing is conducted before the deflection condition of an alignment deflector for optical axis adjustment is changed or a table of focus adjustment amounts in correspondence with deflection conditions of the alignment deflector is provided, whereby when the deflection condition of the alignment deflector is changed, a focus adjustment is carried out in accordance with the table.

An object of the present invention is to provide a charged particle beam apparatus and an alignment method of the charged particle beam apparatus, which make it possible to align an optical axis of a charged particle beam easily even when a state of the charged particle beam changes. The present invention comprises calculation means for calculating a deflection amount of an alignment deflector which performs an axis alignment for an objective lens, a plurality of calculation methods for calculating the deflection amount is memorized in the calculation means, and a selection means for selecting at least one of the calculation methods is provided.

Charged particle beam alignment method and charged particle beam apparatus

Growing community of inventors

Mito, Japan

Atsushi Takane